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435.80 Datasheet PDF File

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				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	... IN RG = 10 A 50 135 435 340 ns IM EL 4 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 ...80 W A Ptot 240 IC 60 200 50 160 40 120 30 80 20 40 0 0...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPM3512A
OCR Text	...427 428 429 430 431 432 433 434 435 436 437 438 439 440 441 442 443 444 445 446 447 448 449 450 451 452 453 454 455 456 457 458 459 460 461 462 463 464 465 466 467 468 469 470 471 472 473 474 475 476 477 208-Pin PQFP 7 4 3 2 1 208 206 205 2...
Description	EPM3512A Dedicated Pin-Outs EPM3512A Dedicated Pin-Outs
File Size	40.61K / 12 Page	View it Online	Download Datasheet

				HAMAMATSU[Hamamatsu Corporation] NXP Semiconductors N.V. Hamamatsu Photonics K.K.
Part No.	G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343-32 G8211-21 G8797-32 G8211-11 G8211-12 G8211-22 G8211-31 G8211-32 G8340 G8340-11 G8340-12 G8340-21 G8340-22 G8340-31 G8340-32 G8797-11 G8797-12 G8797-21 G8797-22 G8797-31 G8797-31SC G8343-32FC G8211-11SC G8211-21SC G8340-11SC G8340-21SC
OCR Text	...6-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone:...
Description	InGaAs PIN photodiode with preamp Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk Optoelectronic 光电 InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
File Size	99.99K / 2 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	...CRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated w...80 120 -1H 110 -1L 110 Unit Note mA 1 ICC2P ICC2PS ICC2N 2 2 16 mA Precharge...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	...CRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated w...80.8 -88.6 -93.0 IOH Min (100MHz/133MHz) IOH Min (66MHz) IOH Max (66 and 100MHz/133MHz) 66MHz,...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	... K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,...80) 0.125 +0.075 -0.035 (2-R 0.15) #54 #28 (0.80) (2-R 0.30) ( 2.00 Dp0~0.05 BTM) 9.220.20 (1....
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	... K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,...80 0.0315 54Pin TSOP Package Dimension Rev. 1.3 September. 2003 10.16 0.400 0.125+0.075 -0....
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1030
OCR Text	...5 0.065 0.060 --- 0.003 0.007 0.435 --- 45 _NOM --- 0.050 0.118 0.128 0.055 0.070 0.115 0.145 T A J F SEATING PLANE P 8-32 NC 2A U S C WRENCH FLAT E B EMITTER BASE EMITTER COLLECTOR CASE 244-04 ISSUE ...
Description	UHF POWER TRANSISTOR
File Size	54.66K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1031
OCR Text	...5 0.065 0.060 --- 0.003 0.007 0.435 --- 45 _NOM --- 0.050 0.118 0.128 0.055 0.070 0.115 0.145 T A J F SEATING PLANE P 8-32 NC 2A U S C WRENCH FLAT E B EMITTER BASE EMITTER COLLECTOR CASE 244-04 ISSUE ...
Description	UHF POWER TRANSISTOR
File Size	54.61K / 2 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF15030
OCR Text	...0.618 0.654 0.654 0.600 0.517 0.435 0.357 0.296 0.247 S21 49 46 43 40 36 33 29 25 20 13 6 -3 -16 - 30 - 48 - 66 - 81 - 94 -104 -112 -119 \|S12\| 0.006 0.007 0.007 0.007 0.008 0.007 0.008 0.009 0.008 0.009 0.009 0.009 0.009 0.010 0.010 0.010 ...
Description	RF POWER TRANSISTOR
File Size	156.90K / 8 Page	View it Online	Download Datasheet

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