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  4480 Datasheet PDF File

For 4480 Found Datasheets File :: 102    Search Time::1.843ms    
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    B41888C3687M002 B41888E8687M002 B41888 B41888C3108M001 B41888C3108M002 B41888C3109M001 B41888C3109M002 B41888C3128M001 B

EPCOS[EPCOS]
Part No. B41888C3687M002 B41888E8687M002 B41888 B41888C3108M001 B41888C3108M002 B41888C3109M001 B41888C3109M002 B41888C3128M001 B41888C3128M002 B41888C3129M001 B41888C3129M002 B41888C3228M001 B41888C3228M002 B41888C3338M001 B41888C3338M002 B41888C3398M001 B41888C3398M002 B41888C3477M001 B41888C3477M002 B41888C3478M001 B41888C3478M002 B41888C3568M001 B41888C3568M002 B41888C3687M001 B41888C3688M001 B41888C3688M002 B41888C3828M001 B41888C3828M002 B41888C4108M001 B41888C4108M002 B41888C4109M001 B41888C4109M002 B41888C4158M001 B41888C4158M002 B41888C4228M001 B41888C4228M002 B41888C4278M001 B41888C4278M002 B41888C4337M001 B41888C4337M002 B41888C4398M001 B41888C4398M002 B41888C4477M001 B41888C4477M002 B41888C4478M001 B41888C4478M002 B41888C4568M001 B41888C4568M002 B41888C4687M002 B41888C4828M001 B41888C4828M002 B41888C5108M001 B41888C5108M002 B41888C5158M001 B41888C5158M002 B41888C5188M001 B41888C5188M002 B41888C5227M001 B41888C5227M002 B41888C5228M001 B41888C5228M002 B41888C5278M001 B41888C5278M002 B41888C5337M001 B41888C5337M002 B41888C5338M001 B41888C5338M002 B41888C5398M001 B41888C5398M002 B41888C5477M001 B41888C5477M002 B41888C5478M001 B41888C5478M002 B41888C5568M001 B41888C5568M002 B41888C56
OCR Text ...0 3442 3542 4690 4102 4200 5040 4480 5946 6020 7457 966 1260 1736 2100 2800 3442 3542 4200 B41888D3688M*** B41888C3828M*** B41888C3109M*** B41888C3129M*** B41888C4337M*** B41888C4477M*** B41888C4687M*** B41888C4108M*** B41888C4158M*** B4188...
Description Long-life grade capacitors Very low impedance

File Size 713.48K  /  27 Page

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    FDS6673AZ

Fairchild Semiconductor, Corp.
Part No. FDS6673AZ
OCR Text ... = -1 A, VGS = -10 V, RGEN = 6 4480 1190 615 3.8 pF pF pF Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -15 V,...
Description 30 Volt P-Channel PowerTrench MOSFET 14500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 127.22K  /  5 Page

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    BFY180

SIEMENS AG
Siemens Semiconductor Group
Part No. BFY180
OCR Text ...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A04 1998-04-01 BFY 180 1.05 0.25 1.02 0.1 2 0.76 0.5 0.1 XY 3 4 1.78 4.2 -0.2 1 0.1 +0....
Description HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system

File Size 96.17K  /  5 Page

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    BFY181

Siemens Semiconductor Group
Part No. BFY181
OCR Text ...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A04 1998-04-01 BFY 181 1.05 0.25 1.02 0.1 2 0.76 0.5 0.1 XY 3 4 1.78 4.2 -0.2 1 0.1 +0....
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

File Size 96.09K  /  5 Page

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    BFY182

Siemens Semiconductor Group
Part No. BFY182
OCR Text ...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A04 1998-04-01 BFY 182 1.05 0.25 1.02 0.1 2 0.76 0.5 0.1 XY 3 4 1.78 4.2 -0.2 1 0.1 +0....
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

File Size 96.02K  /  5 Page

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    BFY183

Siemens Semiconductor Group
Part No. BFY183
OCR Text ...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A03 1998-04-01 BFY 183 1.05 0.25 1.02 0.1 2 0.76 0.5 0.1 XY 3 4 1.78 4.2 -0.2 1 0.1 +0....
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

File Size 96.32K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M11JVR
OCR Text ... 300 95 110 16 48 51 9 10300 4480 1770 450 145 165 32 96 75 18 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sy...
Description POWER MOS V 100V 144A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 70.67K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M11LV APT10M11LVR
OCR Text ... 300 95 110 16 33 46 8 10300 4480 1770 450 145 165 32 66 70 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sy...
Description POWER MOS V 100V 100A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

File Size 65.14K  /  4 Page

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    R2S15901SP

Renesas Electronics Corporation
Part No. R2S15901SP
OCR Text ...3ms 47ms 51ms 93ms 102ms 140ms (4480) 1/8 COUNT[1:0]=LM 5ms 9ms 10ms 19ms 20ms 28ms (896) 0 COUNT[1:0]=LL 0ms 0ms 0ms 0ms 0ms 0ms (0) The delay time is evaluated by the following formula: Delay Time = (1/fs) x (sampling counts + 1) sec ...
Description Digital Delay IC for Lip Sync

File Size 196.59K  /  8 Page

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    2SC4959 2SC4959-T2 2SC4959-T1 2SC4959NE68530

NEC[NEC]
NEC, Corp.
Part No. 2SC4959 2SC4959-T2 2SC4959-T1 2SC4959NE68530
OCR Text ...58.3 MAG 0.7930 0.5910 0.5130 0.4480 0.4180 0.4030 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 S22 ANG -26.2 -32.9 -32.9 -32.8 -35.9 -33.3 -36.5 -36.2 -39.5 -42.3 -46.6 -48.8 -47.2 -55.1 -51.2 5 2SC4959 No part o...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD 高频低噪声放大器NPN硅外延晶体管超小型模

File Size 45.62K  /  6 Page

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