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				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LC APT5010LLC
OCR Text	...ps 500 47 0.100 25 250 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	117.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...ps 500 46 0.100 25 250 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	... 500 46 0.100 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	... 500 44 0.100 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...ps 500 44 0.100 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...ps 500 44 0.100 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...ps 500 47 0.100 25 250 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	...ps 500 37 0.140 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 37A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	... 500 35 0.140 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 35A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014 APT5014BLL APT5014SLL
OCR Text	...s Amps 500 35 0.140 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 35A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.46K / 2 Page	View it Online	Download Datasheet

For 5.25w Found Datasheets File :: 3961 Search Time::0.953ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |