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  AEQ75Y48N-TI1 Datasheet PDF File

For AEQ75Y48N-TI1 Found Datasheets File :: 119+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |   

    EP1K10 EP1K100 EP1K30 ACEX1 EP1K50 EP1K30TI144-2

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Part No. EP1K10 EP1K100 EP1K30 ACEX1 EP1K50 EP1K30TI144-2
Description Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN
Programmable Logic Device Family

File Size 385.71K  /  86 Page

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HUA FENG CIRCUIT





    K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S28163

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 111.68K  /  11 Page

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    R76TI14704040J

Kemet Corporation
Part No. R76TI14704040J
Description Capacitor, film, 4700 pF, /-5% Tol, -55/ 105C, General Purpose, 1600 VDC@85C, Lead Spacing=15 mm

File Size 49.30K  /  1 Page

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    STI18N65M5 STF18N65M5 STP18N65M5

STMicroelectronics
Part No. STI18N65M5 STF18N65M5 STP18N65M5
Description N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

File Size 938.57K  /  19 Page

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    R73TI11504000J

Kemet Corporation
Part No. R73TI11504000J
Description Capacitor, film, 1500 pF, /-5% Tol, -55/ 105C, General Purpose, 1600 VDC@85C, Lead Spacing=15 mm

File Size 49.06K  /  1 Page

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    TI100505U121 TI100505U600

Frontier Electronics.
Part No. TI100505U121 TI100505U600
Description SMD MULTILAYER FERRITE CHIP BEADS (HIGH CURRENT)

File Size 108.29K  /  2 Page

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    STI17NF25 STD17NF25 STF17NF25 STP17NF25

STMicroelectronics
Part No. STI17NF25 STD17NF25 STF17NF25 STP17NF25
Description N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET?/a> II Power MOSFET
N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET
N-channel 250V - 0.14ヘ - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET⑩ II Power MOSFET

File Size 498.33K  /  17 Page

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    Voltage Multipliers
Part No. LTI1406UFT LTI1410UFT LTI1402FT
Description 600 V single phase bridge 20-25 A forward current, 70 ns recovery time
1000 V single phase bridge 20-25 A forward current, 70 ns recovery time
200 V single phase bridge 20-25 A forward current, 150 ns recovery time

File Size 123.92K  /  2 Page

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Part No. STH11020 STH11022 STI2001 STI1020 STI4066 STI17773
Description TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA
TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA
晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 600毫安一c)|2
晶体管|晶体管|达林顿| npn型| 120伏特五(巴西)总裁| 10A条一c)|3
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:TO-220; Reel Quantity:1500; Capacitance:30pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:270V; Holding Current:150mA RoHS Compliant: NA

File Size 161.37K  /  1 Page

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    IXTA10N60P IXTP10N60P IXTI10N60P

Infineon Technologies AG
IXYS CORP
IXYS Corporation
Part No. IXTA10N60P IXTP10N60P IXTI10N60P
Description MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET

File Size 233.24K  /  4 Page

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For AEQ75Y48N-TI1 Found Datasheets File :: 119+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |   

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