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  amperes 400 Datasheet PDF File

For amperes 400 Found Datasheets File :: 9726    Search Time::1.703ms    
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    Littelfuse, Inc.
Part No. LA100P500-4TI LA100P30-1 LA100P300-4TI
OCR Text ...ery fast acting ? 15 C 1000 amperes specifications voltage rating: ac: 1000 volts dc: 750 volts interrupting rating: 1...400 la100p400-4 4 290 70 400 la100p400-4ti 4ti 290 70 500 la100p500-4 4 450 90 500 la100p500-4ti 4ti...
Description Special Purpose Fuses 特殊用途保险丝

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    CM200DY-12H

Powerex Power Semiconductors
Part No. CM200DY-12H
OCR Text ... IGBTMODTM H-Series Module 200 amperes/600 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P -...400* 200 400* 780 17 26 270 2500 Units C C Volts Volts amperes amperes amperes amperes Watts in-l...
Description Dual IGBTMOD 200 amperes/600 Volts
Dual IGBTMOD 200 amperes/600 Volts

File Size 56.47K  /  4 Page

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    CM200DY-28H

Powerex Power Semiconductors
Part No. CM200DY-28H
OCR Text ... IGBTMODTM H-Series Module 200 amperes/1400 Volts A B F F G P C2E1 E2 C1 E2 G2 C D G1 E1 J P K N - DIA. (4 TYP...400* 200 400* 1500 26 26 400 2500 Units C C Volts Volts amperes amperes amperes amperes Watts in-...
Description Dual IGBTMOD 200 amperes/1400 Volts
Dual IGBTMOD 200 amperes/1400 Volts

File Size 59.12K  /  4 Page

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    CM400DU-12F

Powerex Power Semiconductor...
Powerex Power Semiconductors
Part No. CM400DU-12F
OCR Text ...Gate Design Dual IGBTMODTM 400 amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 BE CM C2E1 C L E2 H U J H E2 C1 E1 G1 V Q S - NUTS (3 TYP) Q P N G K K K R M C L G...
Description Trench Gate Design Dual IGBTMOD?/a> 400 amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 amperes/600 Volts

File Size 64.03K  /  4 Page

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    CM400DU-24H

Powerex Power Semiconductors
Part No. CM400DU-24H
OCR Text ... IGBTMODTM U-Series Module 400 amperes/1200 Volts A "R" (4 PLACES) E F G H G2 J E2 C2E1 E2 B E K E1 L M G1 C1 J "T" (4 PLACES) N "S" (3 PLACES) Q P D C G2 E2 C2E1 E2 C1 E1 G1 Description: Power...
Description Dual IGBTMOD U-Series Module 400 amperes/1200 Volts
Dual IGBTMOD⑩ U-Series Module 400 amperes/1200 Volts
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C)

File Size 73.18K  /  4 Page

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    TDM30008D TDM30016D TDM30004D TDM30014A TDM30016A TDM30014D TDM30010A TDM30008A TDM30002A TDM30002D TDM30004A TDM30006D

Microsemi Corporation
Part No. TDM30008D TDM30016D TDM30004D TDM30014A TDM30016A TDM30014D TDM30010A TDM30008A TDM30002A TDM30002D TDM30004A TDM30006D TDM30006A TDM30010D TDM30012A TDM30012D
OCR Text ...r leg average forward current - amperes maximum allowable case temperature - c 0 180 120 60 dc 0 average forward current - amperes maximum p...400 500 figure 4 50 100 100 200 300 400 time in seconds transient thermal impedance - per leg juncti...
Description Twin Diode Module

File Size 111.89K  /  2 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ... = 350V IF, FORWARD CURRENT (amperes) 160 TJ = 150C TJ = 100C 80 TJ = 25C TJ = -55C 40 2000 120A 1500 60A 120 1000 500 30A...400 600 800 1000 diF /dt, CURRENT SLEW RATE (amperes/SEC) Figure 3, Reverse Recovery Current vs Curr...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...V, 10V & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 200 6.5V 200 250 VGS=15V VGS=10V VGS=7V 6.5V 150 6V 150 6V ...400 ID, DRAIN CURRENT (amperes) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ...V, 10V & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 200 6.5V 200 250 VGS=15V VGS=10V VGS=7V 6.5V 150 6V 150 6V ...400 ID, DRAIN CURRENT (amperes) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    SDM30014R SDM30016R SDM30008R SDM30014S SDM30008S SDM30016S SDM30010 SDM30012S SDM30006S SDM30006R

Microsemi Corporation
Part No. SDM30014R SDM30016R SDM30008R SDM30014S SDM30008S SDM30016S SDM30010 SDM30012S SDM30006S SDM30006R
OCR Text ...ating average forward current - amperes maximum allowable case temperature - c 0 180 120 60 dc 0 average forward current - amperes maximum p...400 500 figure 4 50 100 100 200 300 400 time in seconds transient thermal impedance junction to case...
Description Schottky Rectifier

File Size 109.02K  /  2 Page

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