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  cbe Datasheet PDF File

For cbe Found Datasheets File :: 316    Search Time::1.109ms    
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    BFG425W

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFG425W
OCR Text ...onents (see Fig.14) DESIGNATION cbe Ccb Cce L1 L2 L3 (note 1) Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 80 2 80 1.1 1.1 0.25 VALUE fF fF fF nH nH nH UNIT 36 (1) 37 (1) 3...
Description NPN 25 GHz wideband transistor

File Size 111.73K  /  12 Page

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    BFG93A BFG93A_X BFG93 BFG93A/X BFG93X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG93A BFG93A_X BFG93 BFG93A/X BFG93X
OCR Text ...onents (see Fig.19) DESIGNATION cbe Ccb Cce L1 L2 L3 LB LE 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT E QLB = 50; QLE = 50. QLB,E (f) = QLB,E (f/fc). fc = scaling frequency = 1000 MHz. L3 C be B L1 LB B' E' LE ...
Description NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管(npn型第六代赫兹宽带晶体管)

File Size 132.96K  /  16 Page

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    BFT92W

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFT92W
OCR Text ...- ps - mV mA deg fF mV - - ns F cbe Ccb Cce L1 L2 L3 LB LE List of components (see Fig.18) DESIGNATION 2 100 100 0.34 0.10 0.34 0.60 0.60 VALUE QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. E L3 L1 B LB B' E'...
Description PNP 4 GHz wideband transistor

File Size 90.95K  /  12 Page

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    UPD720101

NEC
Part No. UPD720101
OCR Text ...e Level Function AD (31 : 0) cbe (3 : 0)0 PAR FRAME0 IRDY0 TRDY0 STOP0 IDSEL DEVSEL0 REQ0 GNT0 PERR0 SERR0 INTA0 INTB0 INTC0 PCLK VBBRST0 CRUN0 PME0 VCCRST0 SMI0 XT1/SCLK XT2 DP (5 : 1) DM (5 : 1) RSDP (5 : 1) RSDM (5 : 1) OCI (5 : 1) PP...
Description USB2.0 HOST CONTROLLER

File Size 298.10K  /  36 Page

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    BFP181R Q62702-F1685

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181R Q62702-F1685
OCR Text ...= LBO = LEI = LEO = LCI = LCO = cbe = CCB = CCE = 0.89 0.73 0.4 0.15 0 0.42 189 15 187 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.01K  /  7 Page

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    BFP181W Q62702-F1501

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181W Q62702-F1501
OCR Text ...= LBO = LEI = LEO = LCI = LCO = cbe = CCB = CCE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.99K  /  7 Page

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    BFP181 Q62702-F1271

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181 Q62702-F1271
OCR Text ...= LBO = LEI = LEO = LCI = LCO = cbe = CCB = CCE = 0.89 0.73 0.4 0.15 0 0.42 189 15 187 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 61.12K  /  7 Page

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    Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Part No. 2N3404 GES5816-J1 HS5306 HS5306A HS5308 HS5308A HS3405 2N3402 2N3403 2N3405 2N4425 GES5810-J1 GES5811-J1 GES5812-J1 GES5813-J1 GES5814-J1 GES5815-J1 GES5817-J1 GES5819-J1 GES5820-J1 GES5821-J1 GES5822-J1 GES5823-J1 GES6010-J1 GES6011-J1 GES6012-J1 GES6013-J1 GES6014-J1 GES6015-J1 GES6016-J1 GES6017-J1 GES6218-J1 GES6219-J1 GES6220-J1 GES6221-J1 HS3402 HS3403 HS3404 GES5818-J1
OCR Text ...: Most devices are available in cbe lead code on special order. Shaded areas indicate Darlington.
Description Leaded Small Signal Transistor General Purpose
Small Signal Transistors 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Small Signal Transistors 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Small Signal Transistors 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CONNECTOR ACCESSORY 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Small Signal Transistors 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 51.86K  /  1 Page

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    BGB420 BGB420E6327

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB420 BGB420E6327
OCR Text ... 3 LCI LCO C LCO L1 L2 cbe cbe LEI CCE CCB CCE C1 C2 LEO E C3 Valid up to 3GHz Data sheet 9 2001-08-10 BGB420 Typical Application DC Bypass Voltage Supply L VBias RBias RF Out C IBias 4 ...
Description Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA

File Size 436.18K  /  10 Page

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    BGB540

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB540
OCR Text ... 2 LCI 3 LCO C L1 L2 cbe cbe LEI CCE CCB CCE C1 C2 LEO E C3 Valid up to 3GHz Data sheet 9 2002-09-11 BGB540 Typical Application DC Bypass Voltage Supply L VBias RBias RF Out IC 3 C ...
Description Active Biased RF Transistor
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343

File Size 95.55K  /  10 Page

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