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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Reco...limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.06mH RG = 25, IAS = ...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 ...limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 ...limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...gic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF3205S/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.2...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...gic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF3205 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6....
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...gic Level Devices Fig 14. For N-Channel HEXFETS IRF3315S/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243)...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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