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  crss ciss Datasheet PDF File

For crss ciss Found Datasheets File :: 31025    Search Time::1.125ms    
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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...) tr td(off) tf LD LS ciss Coss crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...) tr td(off) tf LD LS ciss Coss crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    VEC2811

Sanyo Semicon Device
Part No. VEC2811
OCR Text ...yfs RDS(on)1 RDS(on)2 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--1.5A, VGS=-10V ID=--0.7A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VD...
Description MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 45.56K  /  6 Page

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    VEC2812

Sanyo Semicon Device
Part No. VEC2812
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGSS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 45.97K  /  6 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...) tr td(off) tf LD LS ciss Coss crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    VEC2813

Sanyo Semicon Device
Part No. VEC2813
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGSS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.4A ID=1.5A, VGS=4V ID=0.7A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 46.46K  /  6 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... td(on) tr td(off) tf ciss Coss crss Min. 20 --- --- --- 0.70 5.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 5.0 1.2 1.8 5.9 13 23 19 310 130 55 Max. Units Conditions --- ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...) tr td(off) tf LD LS ciss Coss crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...ed (Continued) SYMBOL ciss COSS crss LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Mod...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    VEC2814

Sanyo Semicon Device
Part No. VEC2814
OCR Text ...n)1 RDS(on)2 RDS(on)3 ciss Coss crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGSS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.4A ID=1.5A, VGS=4V ID=0.7A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 45.96K  /  6 Page

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