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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STD15NF10 STD15NF10T4 D15NF10
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OCR Text |
...lanche energy
dv/dt (3) Peak diode recovery voltage slope Tstg TJ Storage temperature
1. Pulse width limited by safe operating area 2. Starting TJ = 25 oC, ID = 10A, VDD = 30V 3. ISD 13A, di/dt 300 A/s, VDS V(BR)DSS, TJ TJMAX
Table... |
Description |
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET
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File Size |
384.67K /
13 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4202
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OCR Text |
...ottky style soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v mj avalanche current c 72 a 38 a i d 19 15 130 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1... |
Description |
30V N-Channel MOSFET
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File Size |
485.26K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
HUFA75321D3 HUFA75321D3S HUFA75321D3ST
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OCR Text |
...y in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications whe...30V, ID 20A, RL = 1.5, VGS = 10V, RGS = 25
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11 55 47 66 -
100 170
ns ns ns ns ns ns
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Description |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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File Size |
223.28K /
10 Page |
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it Online |
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