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  dson Datasheet PDF File

For dson Found Datasheets File :: 1991    Search Time::1.25ms    
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    PMV45EN

Philips Semiconductors
Part No. PMV45EN
OCR Text ... v n i d 5.4 a n p tot 2w n r dson 42 m w table 1: pinning - sot23 simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot23 2 source (s) 3 drain (d) msb003 top view 12 3 s d g mbb076 philips semiconduc...
Description mTrenchMOSTM enhanced logic level FET

File Size 125.55K  /  12 Page

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    Advanced Micro Devices, Inc.
Part No. PHP125/T3
OCR Text ...rent (dc) t s =80 c -- 2.5 a r dson drain-source on-state resistance i d = - 1 a; v gs = - 10 v - 0.25 w p tot total power dissipation t s =80 c - 2.8 w 1997 jun 18 3 philips semiconductors product speci?cation p-channel enhancement mod...
Description Microprocessor Supervisory Circuit; Package: SO; No of Pins: 8; Temperature Range: -40&deg;C to 85&deg;C 晶体管MOSFET的采SOT - 96

File Size 81.73K  /  12 Page

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    PHB45NQ15T

NXP Semiconductors
Part No. PHB45NQ15T
OCR Text ...n v ds 150 v n i d 45.1 a n r dson 42 m w n q gd = 10.3 nc (typ). table 1: discrete pinning pin description simpli?ed outline symbol 1 gate sot78 (to-220ab) sot404 (d 2 -pak) 2 drain [1] 3 source mb mounting base; connected to drain 12 m...
Description N-channel TrenchMOS standard level FET

File Size 108.64K  /  13 Page

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    PMT200EN

NXP Semiconductors
Part No. PMT200EN
OCR Text ... 3.3 a static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 1.5 a; t j = 25 c - 190 235 m [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm...
Description 100 V N-channel Trench MOSFET

File Size 212.86K  /  13 Page

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    BUK7Y41-80E

NXP Semiconductors
Part No. BUK7Y41-80E
OCR Text ...- 64 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 11 - 29.6 41 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 5 a; v ds = 64 v; t j = 25 c; fig. 13 ;...
Description N-channel 80 V, 41 mΩ standard level MOSFET in LFPAK56

File Size 345.12K  /  13 Page

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    PHB95NQ04LT

NXP Semiconductors
Part No. PHB95NQ04LT
OCR Text ... n i d 75 a n p tot 157 w n r dson 7m w . table 1: pinning - sot404 (d 2 -pak), simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot404 (d 2 -pak) 2 drain (d) [1] 3 source (s) mb mounting base; connected t...
Description N-channel TrenchMOS logic level FET

File Size 110.97K  /  12 Page

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    PH2525L

NXP Semiconductors
Part No. PH2525L
OCR Text ...s n v ds 25 v n i d 100 a n r dson 2.5 m w n q gd = 6.8 nc (typ) table 1. pinning pin description simpli?ed outline symbol 1, 2, 3 source (s) sot669 (lfpak) 4 gate (g) mb mounting base; connected to drain (d) mb 1234 s d g mbb076 www.da...
Description N-channel TrenchMOS ultra low level FET

File Size 123.29K  /  12 Page

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    ST1S12XX10 ST1S12XX12 ST1S12XX18

STMicroelectronics
Part No. ST1S12XX10 ST1S12XX12 ST1S12XX18
OCR Text ...00 a over temperature range r dson typ. 250 m and 400 m uses tiny capacitors and inductors operative junction temp. -40c to 125c available in tsot23-5l package description the st1s12gxx is a step down dc-dc converter optimized for...
Description Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L
   Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L

File Size 287.37K  /  20 Page

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    PSMN2R6-60PS

NXP Semiconductors
Part No. PSMN2R6-60PS
OCR Text ... 326 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 1.97 2.6 m dynamic characteristics q g(tot) total gate charge - 140 - nc q gd gate-drain charge i d = 25 a; v ds = 48 ...
Description N-channel 60 V, 2.6 mstandard level MOSFET in SOT78
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78

File Size 253.03K  /  13 Page

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For dson Found Datasheets File :: 1991    Search Time::1.25ms    
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