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Electronic Theatre Controls, Inc.
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Part No. |
AN-937
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OCR Text |
...ain voltage. All HEXFET(R)s are enhancementmode devices.
AN-937 (v.Int)
SOURCE METALLIZATION
SILICON GATE CHANNEL
INSULATING OXIDE
P
N SOURCE
GATE OXIDE
N
N
TRANSISTOR TRANSISTOR DRAIN DRAIN All MOSFET voltages... |
Description |
Gate Drive Characteristics and Requirements for HEXFET
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File Size |
365.72K /
21 Page |
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Motorola
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Part No. |
P4N80E
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OCR Text |
... nchannel enhancementmode silicon gate this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. in addition, this advanced tmo... |
Description |
Search --To MTP4N80E
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File Size |
168.69K /
8 Page |
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Motorola
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Part No. |
24N40E
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OCR Text |
... # $# nchannel enhancementmode silicon gate this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. in addition, this advanced tmo... |
Description |
Search --To MTW24N40E
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File Size |
152.88K /
8 Page |
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Motorola, Inc.
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Part No. |
MRF282
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OCR Text |
enhancementmode lateral mosfets designed for class a and class ab pcn and pcs base station applications at frequencies up to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. ? specified twotone performance @ 2... |
Description |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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File Size |
145.00K /
11 Page |
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it Online |
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Motorola, Inc.
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Part No. |
MRF9045M
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OCR Text |
enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz. the high gain and broadband performance of this device make it ideal for largesignal, commonsource amplifier applic... |
Description |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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File Size |
142.24K /
8 Page |
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it Online |
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Price and Availability
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