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  g 6 Datasheet PDF File

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    STH300NH02L-6

ST Microelectronics
STMicroelectronics
Part No. STH300NH02L-6
OCR Text ...nsfer capacitance - 307 - pf q g total gate charge v dd = 20 v, i d = 120 a, v gs = 10 v (see figure 14) - 109 - nc q gs gate-source charge - 30 - nc q gd gate-drain charge - 26 - nc table 6. switching times symbol parameter test conditio...
Description N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A

File Size 1,016.38K  /  15 Page

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    HYS64D16000GDL-6-C HYS64D32020GDL-6-C HYS64D16000HDL-6-C HYS64D32020HDL-6-C HYS64D32020GDL-5-C

Qimonda AG
Part No. HYS64D16000gDL-6-C HYS64D32020gDL-6-C HYS64D16000HDL-6-C HYS64D32020HDL-6-C HYS64D32020gDL-5-C
OCR Text g] DL - 5 - C HYS64D[32/16]0x0[H/g]DL-6-C 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Internet Data Sheet Rev. 1.31 Internet Data Sheet HYS64D[32/16]0x0[g/H]DL-[5/6]-C Small-Outline DDR SDRAM Modules ...
Description 200-Pin Small Outline Dual-In-Line Memory Modules

File Size 881.14K  /  34 Page

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    FS40SM-6

Renesas Electronics Corporation
Part No. FS40SM-6
OCR Text ... C55 ~ +150 4.8 v v a a w c c g fs40sm-6 v dss v gss i d i dm p d t ch t stg 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain outline drawing dimensions in mm v ...
Description MITSUBISHI Nch POWER MOSFET

File Size 81.16K  /  5 Page

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    MK02-6-0DE

Meder Electronic
Part No. MK02-6-0DE
OCR Text ...a : e u r o p e : ? n d e r u n g e n i m s i n n e d e s t e c h n i s c h e n f o r t s c h r i t t s b l e i b e n v o r b ...6 0 0 0 0 0 1 a r t i k e l : m k 0 2 / 6 - 0 | e m a i l : s a l e s a s i a @ m e d e r . c o ...
Description (deutsch) MK Reed Sensor

File Size 237.29K  /  2 Page

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    MCR22-6-D MCR22-2RL1

ON Semiconductor
Part No. MCR22-6-D MCR22-2RL1
OCR Text ... Device Marking: Device Type, e.g., MCR22-6, Date Code MAXIMUM RATINgS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (RgK = IK, TJ = to +110C, Sine Wave, 50 to 60 Hz, gate Open) MCR22-6 MCR22-8 Symbol VDRM, VR...
Description Seinsitive gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive gate SCR

File Size 102.00K  /  8 Page

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    HYB39S256160FE-6 HYB39S256160FE-7 HYB39S256407FE-7 HYB39S256400FF-7 HYB39S256400FE-7 HYB39S256400FTL-7 HYB39S256800FTL-7

Qimonda AG
Part No. HYB39S256160FE-6 HYB39S256160FE-7 HYB39S256407FE-7 HYB39S256400FF-7 HYB39S256400FE-7 HYB39S256400FTL-7 HYB39S256800FTL-7 HYB39S256160FTL-7 HYI39S256160FE-7 HYI39S256160FT-7 HYB39S256160FEL-6 HYB39S256160FEL-7 HYB39S256400FEL-7 HYB39S256800FEL-7 HYB39S256160FFL-6 HYB39S256400FFL-7 HYB39S256800FFL-7 HYB39S256160FFL-7 HYB39S256160FF-7 HYB39S256800FF-7
OCR Text ...nterface versions Packages: - P(g)-TSOPII-54 (400mil width) - Pg-TFBgA-54 This chapter lists all main features of the product family HYB3...6 PC166-333 -7 PC133-222 143 7 5.4 7.5 5.4 Unit -- MHz ns ns ns ns @CL2 fCK3 tCK3 tAC3 tCK2 tA...
Description 256-MBit Synchronous DRAM

File Size 1,076.15K  /  27 Page

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    Infineon
Part No. HYS64D64020gBDL-6-C HYS64D64020HBDL-6-C
OCR Text ...2003-06-06.fm HYS64D64020[H/g]BDL-6-C Small Outline DDR SDRAM Modules Table of Contents 1 1.1 1.2 2 3 3.1 3.2 3.3 4 5 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBgA based; Available 3Q04

File Size 342.46K  /  21 Page

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    STH270N4F3-6 STH270N4F3-2

ST Microelectronics
STMicroelectronics
Part No. STH270N4F3-6 STH270N4F3-2
OCR Text ...ransfer capacitance - 50 -pf q g total gate charge v dd = 20 v, i d = 160 a, v gs = 10 v (see figure 14 ) -110150nc q gs gate-source charge - 30 - nc q gd gate-drain charge - 25 - nc table 6. switching times symbol parameter test condi...
Description N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET III Power MOSFET in H2PAK-2 and H2PAK-6 packages

File Size 1,000.17K  /  19 Page

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    HYS64D64020HBDL-6-C

Infineon Technologies AG
Part No. HYS64D64020HBDL-6-C
OCR Text ... 1.1, 2004-05 hys64d64020[h/g]bdl?[5/6]?c small outline ddr sdram modules 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 ...
Description 200-Pin Small Outline Dual-In-Line Memory Modules 200引脚小外型双列直插内存模

File Size 431.48K  /  27 Page

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    Panasonic / NAiS
Part No. SP2-6
OCR Text ...stance Vibration resistance: 18 g, amplitude 3 mm (10 to 55 Hz) Shock resistance: 40 g (11 ms) * Latching types available * High Sensitivity...6 V DC 1 A) Initial contact pressure 2 Form C, 4 Form C 30 m Characteristics (at 25C 77F 50% Rela...
Description Electromechanical Relay, 15A (2C), 10A (4C) COMPACT POWER RELAYS WITH HIgH SENSITIVITY

File Size 127.72K  /  6 Page

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