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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
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| OCR Text |
...e station modulations including gsm edge and CDMA. Final Application * Typical gsm Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain -- 30 dB Power Added Efficienc... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
918.87K /
32 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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| OCR Text |
...mats for cellular applications: gsm, gsm edge, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
1,114.00K /
28 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...egrated circuit is designed for gsm and gsm edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
...egrated circuit is designed for gsm and gsm edge base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 gsm/gsm edge. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的gsm / gsm的edge网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1
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| OCR Text |
...egrated circuit is designed for gsm and gsm edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
679.56K /
20 Page |
View
it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9160HSR3 MRF6S9160HR3
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| OCR Text |
...MOSFETs
Designed for N - CDMA, gsm and gsm edge base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, ID... |
| Description |
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
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| File Size |
532.81K /
12 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductor
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| Part No. |
MRF5S9101NBR1 MRF5S9101NR1
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| OCR Text |
...e Lateral MOSFETs
Designed for gsm and gsm edge base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. gsm Application * Typical gsm Performance: VDD = 26 Volts, IDQ = 700 mA, Pout... |
| Description |
gsm/gsm edge LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
573.86K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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