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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH8S72PHC-7 B99011 MH8S72PHC-8 MH8S72PHC-10
OCR Text ...es:General SDRAM Cycle time(2nd highest CAS latency) Cycle time for CL=2 10ns 13ns 15ns 6ns 7ns 8ns N/A N/A 20ns 30ns 20ns 20ns 30ns 50ns 60ns 24 SDRAM Access form Clock(2nd highest CAS latency) -7 -8 -10 tAC for CL=2 25 26 2...
Description From old datasheet system
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM

File Size 585.65K  /  55 Page

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    INTEL[Intel Corporation]
Part No. ID8259A N8259A 8259A-2 8259A
OCR Text ...the incoming requests is of the highest importance (priority) ascertains whether the incoming request has a higher priority value than the level currently being serviced and issues an interrupt to the CPU based on this determination Each pe...
Description PROGRAMMABLE INTERRUPT CONTROLLER

File Size 315.63K  /  24 Page

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    Actel
Part No. A32100DX
OCR Text ... over 10 years act 3 features ? highest-performance, highest-capacity fpga family ? system performance to 60 mhz over military temperature ? low-power 0.8 cmos technology 3200dx features ? 100 mhz system logic integration ? highest speed fp...
Description HiRel FPGAs

File Size 564.54K  /  98 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text ...of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Di...
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    SMS45 SMS45GCR00 SMS45GCR01 SMS45GCR02 SMS45GCR03 SMS45GCR04 SMS45GCR05 SMS45GCR06 SMS45GCR07 SMS45GR00 SMS45GR01 SMS45G

SUMMIT[Summit Microelectronics, Inc.]
Part No. SMS45 SMS45GCR00 SMS45GCR01 SMS45GCR02 SMS45GCR03 SMS45GCR04 SMS45GCR05 SMS45GCR06 SMS45GCR07 SMS45GR00 SMS45GR01 SMS45GR02 SMS45GR03 SMS45GR04 SMS45GR05 SMS45GR06 SMS45GR07
OCR Text ... supply voltage provided by the highest VX input. Package Thermal Resistance (JA) 16 Lead SSOP.........................................23oC/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 RELIABILITY CHARACTERISTICS Data Retention....
Description Quad Programmable Precision Cascade Sequencer and Supervisory Controller with 4k-Bit Nonvolatile Memory

File Size 963.64K  /  20 Page

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    SMS46 SMS46GCR00 SMS46GCR01 SMS46GCR02 SMS46GCR03 SMS46GCR04 SMS46GCR05 SMS46GCR06 SMS46GCR07 SMS46GR00 SMS46GR07 SMS46G

SUMMIT[Summit Microelectronics, Inc.]
Part No. SMS46 SMS46GCR00 SMS46GCR01 SMS46GCR02 SMS46GCR03 SMS46GCR04 SMS46GCR05 SMS46GCR06 SMS46GCR07 SMS46GR00 SMS46GR07 SMS46GR01 SMS46GR02 SMS46GR03 SMS46GR04 SMS46GR05 SMS46GR06
OCR Text ... supply voltage provided by the highest VX input. Package Thermal Resistance (JA) 16 Lead SSOP.........................................23oC/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 RELIABILITY CHARACTERISTICS Data Retention....
Description Quad Programmable Precision Supervisory Controller With Independent Resets and 4k-Bit Nonvolatile Memory

File Size 893.24K  /  17 Page

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    AN805

Vishay Siliconix
Part No. AN805
OCR Text ...s has been designed to give the highest efficiency available for a given on-resistance in switching applications such as dc-to-dc conversion. These new devices provide a very low gate charge per unit of on-resistance, in addition to fast sw...
Description PWM Optimized Power MOSFETs for Low-Voltage DC/DC Conversion

File Size 129.26K  /  8 Page

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    ML4866 ML4866ES ML4866IS ML4866CS

MICRO-LINEAR[Micro Linear Corporation]
Part No. ML4866 ML4866ES ML4866IS ML4866CS
OCR Text ...r current is preferred when the highest conversion efficiencies are required. For high efficiencies at low output current, the ML4866 contains an autoburst function which automatically switches from pulse width modulation (PWM) to pulsed fr...
Description 3.3V Output DC-DC Step-Down Converter

File Size 245.86K  /  8 Page

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