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  hy27ssxxx 512mbit 64mx8bit 32m Datasheet PDF File

For hy27ssxxx 512mbit 64mx8bit 32m Found Datasheets File :: 41+       Page :: | 1 | 2 | 3 | <4> | 5 |   

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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J52324QC-BJ14
Description 512mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM

File Size 1,253.79K  /  57 Page

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    M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF

Numonyx B.V
Part No. M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF
Description 256 or 512mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

File Size 448.75K  /  24 Page

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    M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF

Numonyx B.V
Part No. M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF
Description 256 or 512mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

File Size 444.00K  /  24 Page

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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
Description ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512mbit gDDR2 SDRAM

File Size 1,416.01K  /  64 Page

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    K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S51

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S511632D-KC/L1L K4S511632D-KC/L75 K4S511632D-KC/L7C K4S511632D-KC1H
Description 32m X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL

File Size 44.56K  /  9 Page

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    Toshiba Corporation
Part No. TH58512FT
Description A Single 3.3V 512mbit(32m × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32m × 8 CMOS NAND EEPROM)

File Size 963.38K  /  33 Page

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    Toshiba Corporation
Part No. TH58512DC
Description A Single 3.3V 512mbit(32m × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32m × 8 CMOS NAND EEPROM)

File Size 1,008.01K  /  33 Page

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    Toshiba Corporation
Part No. TH58512FTI
Description A Single 3.3V 512mbit(32m × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32m × 8 CMOS NAND EEPROM)

File Size 1,389.16K  /  33 Page

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    Cypress Semiconductor, Corp.
Part No. ST62P30BB6 ST6230B ST62P30BB1
Description IC, 60FBGA, 512mbit DDR DRAM 60 PIN BGA 32mBX16
8-BIT MICROCONTROLLER ( MCU ) WITH OTP. ROM. FASTROM. A/D CONVERTER. 16-BIT AUTO-RELOAD TIMER. EEPROM. SPI. UART AND 28 PINS 8位微控制器(MCU)的与检察官办公室。光盘FASTROM。的A / D转换器16位自动重加载定时器EEPROM中。的SPIUART8个引

File Size 893.09K  /  86 Page

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    K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S510432M-TC75 K4S510432M-TL1H K4S510432M-TL1L K4S510432M-TL75

Samsung Electronic
Samsung semiconductor
Part No. K4S510432m K4S510432m-TC1H K4S510432m-TC1L K4S510432m-TC75 K4S510432m-TL1H K4S510432m-TL1L K4S510432m-TL75
Description 32m x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512mbit SDRAM 32m x 4bit x 4 Banks Synchronous DRAM LVTTL

File Size 108.78K  /  11 Page

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