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Duracell
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| Part No. |
UPG2159T6R-E2-A
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| OCR Text |
...=3v upg2314t5n 3.0v gaas hbt pa ic 3.0v gaas hbt pa ic 3.0v gaas hbt pa ic in mass production in in mass production mass production thickness: 0.4mm max. 6-pintson pkg 0.4 1.5 1.5
upg2314t5n evaluation board layout upg2314t5n evalua... |
| Description |
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| File Size |
1,723.49K /
47 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512E-LQ LX5512E
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| OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA pro... |
| Description |
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
218.63K /
10 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512BLQ LX5512B LX5512BLQTR
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| OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA prov... |
| Description |
InGaP HBT 2.4 2.5 GHz Power Amplifier
InGaP HBT 2.4-2.5 GHz power amplifier.
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
173.40K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506E-LQ LX5506E LX5506ELQ
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| OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated
differential output power detector pair to help reduce BOM cost and PCB board space for system implementation. LX5506E is available in a 16-pin 3mmx3mm micro-l... |
| Description |
Wireless LAN Power Amplifier
InGaP HBT 4 ?6GHz Power Amplifier
InGaP HBT 4 - 6GHz Power Amplifier
InGaP HBT 4 6GHz Power Amplifier
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| File Size |
313.83K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5503ELQ LX5503E
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| OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz.
For +18dBm OFDM output power (64QAM, 54Mbps), the PA provi... |
| Description |
InGaP HBT 4 - 6GHz Power Amplifier
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| File Size |
236.29K /
9 Page |
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it Online |
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美国讯泰微波有限公司上海代表
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| Part No. |
461LP3E
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| OCR Text |
...ivers is offered in this single ic which can be con gured in a balanced or push-pull ampli er circuit. the ampli er provides 12 db of gain...hbt 1 watt high ip3 amplifier, 1.7 - 2.2 ghz v02.0705 -25 -20 -15 -10 -5 0 5 10 15 1 1.5 2 2.5 3 ... |
| Description |
InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz
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| File Size |
427.81K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5503-LQ LX5503
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| OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz.
For +18dBm OFDM output power (64QAM, 54Mbps)... |
| Description |
InGaP HBT 5-6GHz Power Amplifier
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| File Size |
469.73K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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