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  imd Datasheet PDF File

For imd Found Datasheets File :: 3916    Search Time::2.437ms    
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    MW6S004N MW6S004NT1

NXP Semiconductors
Part No. MW6S004N MW6S004NT1
OCR Text ... ? 18 db drain efficiency ? 33% imd ? - 34 dbc ? typical two - tone performance @ 900 mhz, 28 volts, i dq = 50 ma, p out = 4 watts pep power gain ? 19 db drain efficiency ? 33% imd ? - 39 dbc ? capable of handling 5:1 vswr, @ 28 vdc, 1...
Description RF Power Field Effect Transistor

File Size 542.00K  /  13 Page

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    MW7IC2040GNR1 MW7IC2040N MW7IC2040NBR1 MW7IC2040NR1

NXP Semiconductors
Part No. MW7IC2040GNR1 MW7IC2040N MW7IC2040NBR1 MW7IC2040NR1
OCR Text ...ression point, cw p1db ? 30 ? w imd symmetry @ 22 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 60 ? mhz vbw resonance point (imd t...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,024.57K  /  29 Page

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    MRFE6S9125NBR1 MRFE6S9125NR1

Freescale Semiconductor, Inc
Part No. MRFE6S9125NBR1 MRFE6S9125NR1
OCR Text ...712 mA 475 mA IDQ = 1475 mA -10 imd, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20 -30 IDQ = 475 mA -40 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measuremen...
Description N-Channel Enhancement-Mode Lateral MOSFETs

File Size 588.79K  /  18 Page

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    MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1

Freescale Semiconductor, Inc
Part No. MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1
OCR Text ...ut @ 1 dB Compression Point, CW imd Symmetry @ 50 W PEP, Pout where imd Third Order Intermodulation 30 dBc (Delta imd Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (imd Third Order Intermodulatio...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 778.53K  /  25 Page

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    08090 PTF080901 PTF080901E PTF080901F 8090

INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. 08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text ...Unit dB % dBc 2004-04-05 D imd PTF080901 DC Characteristics at TCASE = 25C unless otherwise indicated Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage C...
Description    LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

File Size 201.97K  /  10 Page

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    MRFE6S9060NR1

Freescale Semiconductor, Inc
Part No. MRFE6S9060NR1
OCR Text ... 350 mA 225 mA IDQ = 675 mA -10 imd, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20 -30 IDQ = 225 mA -40 350 mA -50 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 570.83K  /  15 Page

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    MRF9060NR1 MRF9060NBR1

Freescale Semiconductor, Inc
Part No. MRF9060NR1 MRF9060NBR1
OCR Text ...B Efficiency -- 40% (Two Tones) imd -- - 31.5 dBc * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters ...
Description RF Power Field Effect Transistors

File Size 496.66K  /  16 Page

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    MRF140

MOTOROLA[Motorola, Inc]
Part No. MRF140
OCR Text ...40% (Typ) * Superior High Order imd * imd(d3) (150 W PEP) -- - 30 dB (Typ) * imd(d11) (150 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR MRF140 150 W, to 150 MHz N-CHANNEL MOS LINEAR RF POW...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 162.25K  /  6 Page

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    MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3

Freescale Semiconductor, Inc
Part No. MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3
OCR Text ...ed) (continued) Characteristic imd Symmetry @ 130 W PEP, Pout where imd Third Order Intermodulation 30 dBc (Delta imd Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (imd Third Order Intermodulati...
Description RF Power Field Effect Transistors

File Size 399.25K  /  12 Page

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    MRF141

MOTOROLA[Motorola, Inc]
Part No. MRF141
OCR Text ...40 20 10 45 -- -- -- dB % dB imd(d3) imd(d11) -- -- - 30 - 60 - 28 -- No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS -- (VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz, imd(d3) --...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 159.11K  /  8 Page

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