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NXP Semiconductors N.V.
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| Part No. |
PSMN4R0-40YS
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| OCR Text |
lfpak package qualified to 175 c. this product is designed and qualified for use in a wide ran ge of industrial, communications and domesti...8-v c iss input capacitance v ds =20v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 16 - 2410 - pf ... |
| Description |
N-channel LFPAK 40 V 4.2 m standard level MOSFET
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| File Size |
190.84K /
15 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R5-25YLC
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| OCR Text |
lfpak package. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 f...8.49.8m ? v gs =10v; i d =15a; t j =25c; see figure 12 -6.37.4m ? dynamic characteristics q gd gat... |
| Description |
N-channel 25 V 7.4 m logic level MOSFET in LFPAK using NextPower technology
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| File Size |
307.54K /
15 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-30YL
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| OCR Text |
... v 7 m ? logic level mosfet in lfpak rev. 04 ? 9 march 2011 product data sheet lfpak table 1. quick reference data symbol parameter conditi...8. output characteristics: drain current as a function of drain-source voltage; typical values 003a... |
| Description |
N-channel 30 V 7 m logic level MOSFET in LFPAK
N-channel 30 V 7 m? logic level MOSFET in LFPAK
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| File Size |
199.79K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-30YLC
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| OCR Text |
lfpak package. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 f...8 003aag125 0 5 10 15 20 0 4 8 12 16 v gs (v) r ds on (m ? )
psmn7r0-30ylc all information provid... |
| Description |
N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
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| File Size |
312.19K /
15 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN016-100YS PSMN016-100YS11
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| OCR Text |
lfpak package qualified to 175 c. this product is designed and qualified for use in a wide ran ge of industrial, communications and domesti...8-nc q gs(th-pl) post-threshold gate-source charge -3.2-nc q gd gate-drain charge i d =30a; v ds =5... |
| Description |
N-channel 100 V 16.3 m standard level MOSFET in LFPAK
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
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| File Size |
296.01K /
15 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK9Y19-55B
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| OCR Text |
...in 1,2,3 4 mb Pinning - SOT669 (LFPAK) simplified outline and symbol Description source (s) gate (g) mounting base, connected to drain (d)
...8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 20 A VGS = 10 V; ID = 20 A Dynamic characteristics Qg(tot) ... |
| Description |
N-channel TrenchMOSlogic level FET
N-channel TrenchMOS⑩ logic level FET
N-channel Trenchmos (tm) logic level FET
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| File Size |
92.61K /
12 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK9Y30-75B
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| OCR Text |
...in 1,2,3 4 mb Pinning - SOT669 (LFPAK) simplified outline and symbol Description source (s) gate (g) mounting base, connected to drain (d)
...8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 15 A VGS = 10 V; ID = 15 A Dynamic characteristics Qg(tot) ... |
| Description |
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS logic level FET
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| File Size |
93.27K /
12 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN6R5-25YLC
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| OCR Text |
lfpak package. this product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 f...8-nc q g(tot) total gate charge - 8.4 - nc
psmn6r5-25ylc all information provided in this document... |
| Description |
N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology
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| File Size |
299.10K /
15 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN6R0-30YL
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| OCR Text |
... v 6 m ? logic level mosfet in lfpak rev. 04 ? 10 march 2011 product data sheet lfpak table 1. quick reference data symbol parameter condit...8-nc q gd gate-drain charge - 3.08 - nc v gs(pl) gate-source plateau voltage v ds =12v; see figure... |
| Description |
N-channel 30 V 6 m logic level MOSFET in LFPAK
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| File Size |
200.38K /
14 Page |
View
it Online |
Download Datasheet |
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