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  load banks Datasheet PDF File

For load banks Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
Description 2M x 4 banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 banks x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E
Description 64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL
2M x 8Bit x 4 banks Synchronous DRAM Data Sheet

File Size 125.55K  /  10 Page

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    KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
Description 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz

File Size 116.15K  /  11 Page

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    Matsushita Electric Works(Nais)
Part No. AQY221N1SX AQY221N1SZ
Description PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA.

File Size 39.43K  /  4 Page

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    Matsushita Electric Works(Nais)
Part No. AQY210KSX AQY210KSZ
Description PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA.

File Size 36.61K  /  4 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    http://
Maxwell Technologies, Inc
Part No. 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPFH 72SD3232
Description 1 Gbit SDRAM 32-Meg X 32-Bit X 4-banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-banks 1千兆位SDRAM2梅格× 32位4,银

File Size 597.29K  /  40 Page

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    K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S510432M-TC75 K4S510432M-TL1H K4S510432M-TL1L K4S510432M-TL75

Samsung Electronic
Samsung semiconductor
Part No. K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S510432M-TC75 K4S510432M-TL1H K4S510432M-TL1L K4S510432M-TL75
Description 32M x 4Bit x 4 banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 banks Synchronous DRAM LVTTL

File Size 108.78K  /  11 Page

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    Matsushita Electric Works(Nais)
Part No. AQV414SX
Description PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 1/2/3-pin side

File Size 43.56K  /  3 Page

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For load banks Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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