Description |
1 Megabit (128 K x 8-bit) CMOS 12.0 Volt/ bulk Erase Flash Memory with Embedded Algorithms<br>0.5MM, ZIF, SMT, 42 POSITION, EMbOSS TAPE T&R RoHS Compliant: Yes<br>CAP 100PF 1500V 20% NP0(C0g) SMD-1808 TR-13 PLATED-NI/SN<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32<br>1 Megabit (128 K x 8-bit) CMOS 12.0 Volt, bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32<br>
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