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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7402 FN4374
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 2... |
| Description |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
44.98K /
8 Page |
 View
it Online |
Download Datasheet
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7405 FN4375
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
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| File Size |
44.24K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7438 FN4638
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3... |
| Description |
From old datasheet system
Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
56.13K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR1110R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 28 37... |
| Description |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
86.53K /
9 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7411 FN4493
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curve... |
| Description |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
From old datasheet system
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| File Size |
44.68K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 FSL9130R3 FSL913A0R
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
45.02K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
|
| Part No. |
FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS9130D3 FSS9130R1 FSS9130R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
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| File Size |
44.30K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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| File Size |
76.16K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23A0D3 FSL23A0R1 FSL23A0R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
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| File Size |
71.38K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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