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  npn bipolar transistor in a ce Datasheet PDF File

For npn bipolar transistor in a ce Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    inFinEON[infineon Technologies aG]
Part No. BFS17W BFS17W.
Description RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma
RF-bipolar npn Type transistors with transition frequency from 1 to 6 GHz
npn Silicon RF transistor

File Size 44.03K  /  5 Page

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    BFP620E7764

infineon Technologies aG
Part No. BFP620E7764
Description RF-bipolar - npn Silicon Germanium RF transistor, high gain low noise RF transistor in SOT343 Package
C BaND, Si, npn, RF SMaLL SIGNaL transistor

File Size 184.23K  /  7 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

international Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 a, 1200 V, N-CHaNNEL IGBT, TO-247aD
inSULaTED GaTE bipolar transistor
   inSULaTED GaTE bipolar transistor

File Size 367.67K  /  10 Page

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    IRG4PH40KDPBF IRG4PH40KDPBF-15

international Rectifier
Part No. IRG4PH40KDPBF IRG4PH40KDPBF-15
Description inSULaTED GaTE bipolar transistor WITH ULTRaFaST SOFT RECOVERY DIODE
inSUaLaTED GaTE bipolar transistor WITH YLTRaFaST SOFT RECOVERY DIODE

File Size 746.83K  /  11 Page

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    STE07DE220 E07DE220

ST Microelectronics
STMicroelectronics
Part No. STE07DE220 E07DE220
Description Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 a - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7a - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7a - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7a - 0.07 power module

File Size 94.73K  /  7 Page

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    agilent (Hewlett-Packard)
HP[agilent(Hewlett-Packard)]
Part No. aT-42036 aT-42036-TR1 aT-42036-BLK
Description aT-42036 · General purpose transistor
agilent aT-42036 Up to 6 GHz Medium Power Silicon bipolar transistor
transistor | BJT | npn | 12V V(BR)ceO | 80Ma I(C) | MICRO-X

File Size 69.63K  /  6 Page

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    ST Microelectronics, inc.
STMICROELECTRONICS[STMicroelectronics]
Part No. STE70IE120
Description Monolithic Emitter Switched bipolar transistor ESBT? 1200 V - 70 a - 0.014 Ω Power Module
Monolithic Emitter Switched bipolar transistor ESBT 1200V 70a 0.014Ohm Power Module
Monolithic Emitter Switched bipolar transistor ESBT㈢ 1200 V - 70 a - 0.014 ヘ Power Module

File Size 127.05K  /  7 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[international Rectifier]
international Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220aB package
inSULaTED GaTE bipolar transistor WITH ULTRaFaST SOFT RECOVERY DIODE
inSULaTED GaTE bipolar transistor(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17a) 绝缘栅双极晶体管(VceS和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17a条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

international Rectifier, Corp.
IRF[international Rectifier]
Part No. IRG4PH40U
Description 41 a, 1200 V, N-CHaNNEL IGBT, TO-247aC
inSULaTED GaTE bipolar transistor WITH ULTRaFaST SOFT RECOVERY DIODE
inSULaTED GaTE bipolar transistor(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21a) 绝缘栅双极晶体管(VceS和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21a条)
inSULaTED GaTE bipolar transistor(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21a)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247aC package

File Size 160.52K  /  8 Page

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    TOSHIBa[Toshiba Semiconductor]
Part No. GT15M321
Description inSULaTED GaTE bipolar transistor SILICON N CHaNNEL IGBT HIGH POWER SWITCHinG aPPLICaTIONS
TOSHIBa inSULaTED GaTE bipolar transistor SILICON N CHaNNEL IGBT

File Size 257.03K  /  6 Page

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For npn bipolar transistor in a ce Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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