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  pulsed cw Datasheet PDF File

For pulsed cw Found Datasheets File :: 760    Search Time::1.531ms    
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    FQA12N60

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQA12N60
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQA12N60 600 12 7.6 48 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A m...cw cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQA12N60 Elect...
Description    600V N-Channel MOSFET
600V N-Channel MOSFET 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 534.02K  /  8 Page

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    MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035-030000-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035-030000-15
OCR Text ...lications general purpose for pulsed or cw applications ? commercial wireless infrastructure - wcdma, lte, wimax ? civilian and military radar ? military and commercial communications ? public radio ? industrial, s...
Description GaN HEMT Power Transistor 30W cw, 30 MHz - 3.5 GHz

File Size 921.51K  /  7 Page

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    FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQB12N60 / FQI12N60 600 10.5 6.7 42 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A...cw cw cw * When mounted on the minimum pad size recommended (PCB Mount) (c)2000 Fairchild Semi...
Description 600V N-Channel QFET
600V N-Channel MOSFET

File Size 538.95K  /  9 Page

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    FQB2N60 FQI2N60 FQB2N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB2N60 FQI2N60 FQB2N60TM
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQB2N60 / FQI2N60 600 2.4 1.5 9.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A...cw cw cw * When mounted on the minimum pad size recommended (PCB Mount) (c)2000 Fairchild Semi...
Description 600V N-Channel QFET
600V N-Channel MOSFET

File Size 579.02K  /  9 Page

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    FQD2N60 FQU2N60 FQD2N60TM FQU2N60TU FQD2N60TF

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQD2N60 FQU2N60 FQD2N60TM FQU2N60TU FQD2N60TF
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQD2N60 / FQU2N60 600 2.0 1.26 8.0 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A ...cw cw cw * When mounted on the minimum pad size recommended (PCB Mount) (c)2000 Fairchild Semico...
Description    600V N-Channel MOSFET
600V N-Channel QFET

File Size 559.21K  /  9 Page

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    FQP12N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP12N60
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQP12N60 600 10.5 6.7 42 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A...cw cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQP12N60 Elect...
Description 600V N-Channel MOSFET

File Size 530.72K  /  8 Page

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    FQP140N03L

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP140N03L
OCR Text ...ous (TC = 100C) Drain Current - pulsed Gate-Source Voltage Single pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak...cw cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQP140N03L Ele...
Description 30V LOGIC N-Channel MOSFET

File Size 587.98K  /  8 Page

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    FQP2N60

Fairchild Semiconductor
Part No. FQP2N60
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQP2N60 600 2.4 1.5 9.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A ...cw cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQP2N60 Electr...
Description 600V N-Channel MOSFET

File Size 568.59K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. CGY93
OCR Text ...ical Characteristics TA = 25 C, pulsed with a duty cycle of 12.5%, ton = 577 s adjust VG1 = VG2 for ID0 = 1.6 A (ID0: drain current without ...cw and DC step one is sufficient. Step 1: Continuous Wave DC Operation For the determination of the ...
Description GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system

File Size 74.01K  /  9 Page

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    NXP Semiconductors N.V.
Part No. BLF7G27LS-100 BLF7G27L-100
OCR Text ...-100 power ldmos transistor 7.3 pulsed cw v ds = 28 v; i dq = 900 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 900 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 7. pulsed cw power gain as a f...
Description Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

File Size 144.04K  /  14 Page

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For pulsed cw Found Datasheets File :: 760    Search Time::1.531ms    
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