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Teridian Semiconductor, Corp.
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| Part No. |
BD814 BD844
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| Description |
scr thyristor; scr Type:Standard gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):65A; Peak Non Repetitive Surge
scr thyristor; scr Type:Sensitive gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):8A; Peak Non Repetitive Surge current, Itsm:100A; gate trigger current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
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| File Size |
40.36K /
1 Page |
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HIROSE ELECTRIC Co., Ltd.
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| Part No. |
BD139-25 BD135-25 BD137-25
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| Description |
Triac; thyristor Type:Sensitive gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):800mA; gate trigger current (QI), Igt:5mA; current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
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| File Size |
35.46K /
3 Page |
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California Eastern Laboratories
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| Part No. |
NX8341UH-AZ NX8341UN-AZ
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| Description |
PLIERS, COMBINATION REDLINE 200MMPLIERS, COMBINATION REDLINE 200MM; Jaw type:Combination; Length:200mm; Handle type:High grip; Capacity, cutting hard wire:2.0mm; Capacity, jaw max:2mm; Joint Construction:lap; Length, jaw:44mm; Width,
NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION
Triac; thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS current, IT(rms):8A; gate trigger current (QI), Igt:50mA; current, It av:8A; gate trigger current Max, Igt:50mA RoHS Compliant: Yes
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| File Size |
302.83K /
7 Page |
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POWEREX INC
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| Part No. |
TA20141803DH
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| Description |
scr thyristor; gate trigger current Max, Igt:200mA; current, It av:1800A; Package/Case:TA2; Repetitive Reverse Voltage Max, Vrrm:1400V; current Rating:2820A RoHS Compliant: Yes
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| File Size |
1,550.10K /
4 Page |
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MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
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| Part No. |
1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N828AUR 1N828AUR-1 1N828AUR-1TR 1N821AUR-1TR 1N827UR MLL829TR-1 1N821AUR 1N821AUR-1 1N821AURTR 1N821AURTR-1 1N821UR 1N821UR-1 1N821UR-1TR 1N821URTR 1N821URTR-1 1N822AUR-1TR 1N822AURTR 1N822AURTR-1 1N822UR 1N822UR-1 1N822UR-1TR 1N822URTR 1N822URTR-1 1N823AUR 1N823AUR-1 1N823AUR-1TR 1N823AURTR 1N823AURTR-1 1N823UR 1N823UR-1 1N823UR-1TR 1N823URTR 1N823URTR-1 1N824AUR 1N824AUR-1 1N824AUR-1TR 1N824AURTR 1N824AURTR-1 1N824UR 1N824UR-1 1N824UR-1TR 1N824URTR 1N824URTR-1 1N825AUR 1N825AUR-1 1N825AUR-1TR 1N825AURTR 1N825AURTR-1 1N825UR 1N825UR-1 1N825UR-1TR 1N825URTR 1N825URTR-1 1N826AUR 1N826AUR-1 1N826AUR-1TR 1N826AURTR 1N826AURTR-1 1N826UR 1N826UR-1 1N826UR-1TR 1N826URTR 1N826URTR-1 1N827AUR 1N827AUR-1 1N827AUR-1TR 1N827AURTR-1 1N827UR-1 1N827UR-1TR 1N827URTR 1N827URTR-1 1N828AURTR 1N828AURTR-1 1N828UR 1N828UR-1TR 1N828URTR 1N828URTR-1 1N829AUR 1N829AUR-1 1N829AUR-1TR 1N829AURTR 1N829AURTR-1 1N829UR-1 1N829URTR 1N829URTR-1 JAN1N821AUR JAN1N821AUR-1 JAN1N821AUR-1TR JAN1N821AURTR JAN1N821AURTR-1 JAN1N821UR JAN1N821UR-1 JAN1N821UR-1TR JAN1N821URTR JAN1N821URTR-1 JAN1N822AUR JAN1N822AUR-1 JAN1N822AUR-1TR JAN1N822AURTR JAN1N822AURTR-1 JAN1N822UR
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| Description |
From old datasheet system
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
6000 gate LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
3000 gate LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Triac; thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS current, IT(rms):6A; gate trigger current (QI), Igt:35mA; current, It av:6A; gate trigger current Max, Igt:35mA RoHS Compliant: Yes
3.3 V quad buffer; 3-state - Description: 3.3V Buffer/Line Driver with Active LOW Output Enable (3-State) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.9@3.3V ns; Voltage: 2.7-3.6 V
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-PDIP -40 to 85
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC 0 to 70
Triac; thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS current, IT(rms):6A; gate trigger current (QI), Igt:25mA; current, It av:6A; gate trigger current Max, Igt:25mA RoHS Compliant: Yes
Triac; thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS current, IT(rms):6A; gate trigger current (QI), Igt:50mA; current, It av:6A; gate trigger current Max, Igt:50mA RoHS Compliant: Yes
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
3.3 V Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.7@3.3V ns; Voltage: 2.7-3.6 V 6.2
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC -40 to 85 6.2
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-SOIC 0 to 70 6.2
SOCKET, D, PCB, STRAIGHT, 9WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:9; Mating cycles, No. of:500; Termination method:Straight PCB; Material, contact:Copper alloy; Material:Steel; Contacts, No. of:9; Material, RoHS Compliant: Yes 6.2
0TC Reference Voltage Zener
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| File Size |
184.26K /
3 Page |
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it Online |
Download Datasheet |
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