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  to220 Datasheet PDF File

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    Infineon Technologies A...
Part No. IKA10N65ET6
OCR Text ...6 650v 10a 1.5v 175c k10eet6 pg-to220-3 fp g c e g c e datasheet 2 v2.2 2017-11-30 ika10n65et6 trenchstop?igbt6 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

File Size 2,241.69K  /  16 Page

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    Infineon
Part No. SPI07N60C3 SPA07N60C3 SPP07N60C3
OCR Text ... * Improved transconductance P-to220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.6 7.3 V A P-to220-3-31 P-to220-3-1 2 1 P-to220-3-1 23 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 mi...
Description for lowest Conduction Losses & fastest Switching

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    MagnaChip Semiconductor...
Part No. MDF18N50BTH
OCR Text ...sstatus mdp18n50bth 55~150 o c to220 tube halogenfree mdf18n50bth 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdow...
Description N-Channel MOSFET 500V, 18.0 A, 0.27(ohm)

File Size 1,244.37K  /  8 Page

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    Infineon Technologies
Part No. IPD26CNE8NG IPU26CNE8NG
OCR Text ...E8N PG-TO262-3 26CNE8N PG-to220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche en...
Description Power-Transistor

File Size 685.73K  /  13 Page

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    SGS-Thomson
Part No. T0810XH T0812XH
OCR Text ... + 125 260 C C A2s A/s Unit A A to220 non-insulated (Plastic) Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T0810xH / T0812xH THERMAL RESI...
Description (T0810xH / T0812xH) Standard Triacs

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    T0605DH T0605MH T0605NH T0605SH

STMicroelectronics
Part No. T0605DH T0605MH T0605NH T0605SH
OCR Text ... + 125 260 C C A2s A/s Unit A A to220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 www.DataSheet4U.co...
Description (T0605xH / T0609xH) SENSITIVE GATE TRIACS

File Size 80.38K  /  5 Page

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    PSMN4R6-60PS-15

NXP Semiconductors
Part No. PSMN4R6-60PS-15
OCR Text ...6 m ? standard level mosfet in to220 rev. 3 ? 18 april 2012 product data sheet to-220ab table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175c --60v i d drain current t mb ...
Description N-channel 60 V, 4.6 mΩ standard level MOSFET in to220

File Size 208.79K  /  14 Page

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    Infineon Technologies A...
Part No. IDP30E65D2
OCR Text ...d2 650v 30a 1.6v 175c e30ed2 pg-to220-2-1 a c c a c 3 idp30e65d2 emittercontrolleddiode rev.2.1,2014-09-18 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Emitter Controlled Diode

File Size 1,697.66K  /  10 Page

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    T0510XH

STMicroelectronics
Part No. T0510XH
OCR Text ... + 125 260 C C A2s A/s Unit A A to220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 www.DataSheet4U.co...
Description STANDARD TRIACS

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    Infineon
Part No. IPP09N03LA IPI09N03LA
OCR Text ....9 50 V m A P-TO262-3-1 P-to220-3-1 Type IPB09N03LA IPI09N03LA IPP09N03LA Package P-TO263-3-2 P-TO262-3-1 P-to220-3-1 Ordering Code Q67042-S4151 Q67042-S4152 Q67042-S4153 Marking 09N03LA 09N03LA 09N03LA Maximum ratings,...
Description Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, to220, RDSon = 8.9mOhm, 50A, LL
OptiMOS®2 - Power packages

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