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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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| OCR Text |
uni-transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Added Lead Free 48-FBGA-6.00x7.00 Product
Draft Date
October 6, 2003
Remark
Preliminary
November 25, 2003 Pre... |
| Description |
1Mx16 bit uni-transistor Random Access Memory
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| File Size |
178.10K /
10 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1B6416B6C
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| OCR Text |
uni-transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C
Draft... |
| Description |
4Mx16 bit Synchronous Burst uni-transistor Random Access Memory
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| File Size |
765.70K /
46 Page |
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Teledyne
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| Part No. |
ER412 ER412D ER412DD
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| OCR Text |
...l welded construction. ? unique uni-frame design, providing high magnetic efficiency and mechanical rigidity. ? high force/mass ratios for r...transistor driver. this hybrid package reduces required pc board floor space by reducing the number ... |
| Description |
Relays
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| File Size |
174.71K /
6 Page |
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Teledyne Technologies, Inc.
TELEDYNE TECHNOLOGIES INC
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| Part No. |
J412TZM-18PL J412YM-26PL
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| OCR Text |
...l welded construction. ? unique uni-frame design, providing high magnetic efficiency and mechanical rigidity. ? high force/mass ratios for r...transistor driver. this hybrid package reduces required pc board floor space by reducing the number ... |
| Description |
RF RELAY, DPDT, MOMENTARY, 0.024A (COIL), 18VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
RF RELAY, DPDT, MOMENTARY, 0.017A (COIL), 26.5VDC (COIL), 450mW (COIL), 1A (CONTACT), 28VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
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| File Size |
739.81K /
6 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOC2802
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| OCR Text |
...evice is suitable for us e as a uni- directional or bi-directional load switch, facilita ted by its common-drain configuration. wlcsp 1.57x1...transistor general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv sss... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
350.78K /
5 Page |
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it Online |
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Price and Availability
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