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  vdss 600v 12 0a 0 70 ohm n-cha Datasheet PDF File

For vdss 600v 12 0a 0 70 ohm n-cha Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1N60ATRR

IRF[International Rectifier]
Part No. IRFU1N60000'>0a IRFR1N60000'>0a IRFR1N60000'>0aTR IRFR1N60000'>0aTRL IRFR1N60000'>0aTRR
Description 0000'>600v Single n-channel HEXFET Power MOSFET in a D-Pak package
0000'>600v Single n-channel HEXFET Power MOSFET in a I-Pak package
SMPS MOSFET
Power MOSFET(0000'>vdss=0000'>600v, Rds(on)max=7.0ohm, Id=1.4A)

File Size 178.28K  /  10 Page

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Part No. FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2.5 FAN1086S-5 FAN1086D-5 FAN1086M-2.85 FAN1086M-3.3 FAN1086M-5 FAN1086D-3.3 FAN1086S-2.85
Description Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30V<0000'>vdss=60V; ; Package: TO-3P(N); R DS On (O): (max 0.0058); I_S (A): (max 70)
FETs Nch 30V<0000'>vdss=60V; ; Package: TO-3P(N); R DS On (O): (max 0.03); I_S (A): (max 45)
Phase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30V<0000'>vdss=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
FETs Nch 30V<0000'>vdss=60V; ; Package: DP; R DS On (O): (max 0.08) (max 0.046); I_S (A): (max 20)
FETs Nch 30V<0000'>vdss=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.036) (max 0.02); I_S (A): (max 45)
MOSFETs - Nch 0000'>vdss=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (06;©): (max 0.018) (max 0.013) (max 0.00000'>12); I_S (A): (max 6)
FETs Nch 30V<0000'>vdss=60V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (O): (max 0.03); V_SSS (V): (max 45)
FETs Nch 30V<0000'>vdss=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<0000'>vdss=60V; ; Package: TO-3P(N); R DS On (O): (max 0.018); I_S (A): (max 50)
FETs Nch 30V<0000'>vdss=60V; Surface Mount Type: N; Package: TFP; R DS On (O): (max 0.0058); I_S (A): (max 75)
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<0000'>vdss=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<0000'>vdss=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)

File Size 44.42K  /  9 Page

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    IRL3803L IRL3803S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRL3803L IRL3803S
Description Power MOSFET(0000'>vdss=30V, Rds(on)=0.006ohm, Id=140000'>0a 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)\u003d 0.006ohm,身份证\u003d律目140000'>0a?)
Power MOSFET(0000'>vdss=30V, Rds(on)=0.006ohm, Id=140000'>0a?)
POWER MOSFET(0000'>vdss=30V, RDS(ON)=0.006ohm, ID=140000'>0aㄌ)
Power MOSFET(0000'>vdss=30V, Rds(on)=0.006ohm, Id=140000'>0a)
Power MOSFET(0000'>vdss=30V, Rds(on)=0.006ohm, Id=140000'>0a?

File Size 436.19K  /  10 Page

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    ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 ISL9R1560G2NL ISL9R1560P2NL ISL9R1560S3ST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 ISL9R1560G2NL ISL9R1560P2NL ISL9R1560S3ST
Description 15A, 0000'>600v StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 0000'>600v Stealth Diode
15A/ 0000'>600v Stealth Diode
15A, 0000'>600v Stealth⑩ Diode
15A, 0000'>600v Stealth Single Diode

File Size 134.24K  /  6 Page

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    IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-STRL

IRF[International Rectifier]
Part No. IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-STRL
Description 0000'>600v Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=0000'>600v, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | n-chaN | 0000'>600v V(BR)CES | 13A I(C) | TO-263AB

File Size 150.13K  /  9 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
Description Power MOSFET(0000'>vdss=30V, Rds(on)max=9.0mohm, Id=90000'>0a?
Power MOSFET(0000'>vdss=30V, Rds(on)max=9.0mohm, Id=90000'>0a 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90000'>0a型?
Power MOSFET(0000'>vdss=30V/ Rds(on)max=9.0mohm/ Id=90000'>0a)
Power MOSFET(0000'>vdss=30V, Rds(on)max=9.0mohm, Id=90000'>0a)
Power MOSFET(0000'>vdss=30V, Rds(on)max=9.0mohm, Id=90000'>0a?)
Power MOSFET(0000'>vdss=30V, Rds(on)max=9.0mohm, Id=90000'>0a??

File Size 120.60K  /  11 Page

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    IRFZ44VZLPBF IRFZ44VZSPBF IRFZ44VZPBF

International Rectifier
Part No. IRFZ44VZLPBF IRFZ44VZSPBF IRFZ44VZPBF
Description HEXFET㈢ Power MOSFET ( 0000'>vdss = 60V , RDS(on) = 0000'>12mヘ , ID = 57A )
HEXFET? Power MOSFET ( 0000'>vdss = 60V , RDS(on) = 0000'>12mΩ , ID = 57A )
HEXFET垄莽 Power MOSFET ( 0000'>vdss = 60V , RDS(on) = 0000'>12m楼? , ID = 57A )

File Size 351.70K  /  13 Page

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    IRFR2905ZPBF IRFU2905ZPBF

International Rectifier
Part No. IRFR2905ZPBF IRFU2905ZPBF
Description HEXFET? Power MOSFET ( 0000'>vdss = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( 0000'>vdss = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( 0000'>vdss = 55V , RDS(on) = 14.5mヘ , ID = 42A )

File Size 271.57K  /  12 Page

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    IRFIZ48G IRFIZ48 IRFIZ48GPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFIZ48G IRFIZ48 IRFIZ48GPBF
Description Power MOSFET(0000'>vdss=60V/ Rds(on)=0000'>12mohm/ Id=39A)
Power MOSFET(0000'>vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条)
Power MOSFET(0000'>vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single n-channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

File Size 168.74K  /  6 Page

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    SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
Part No. IRFM150 2N7224
Description n-channel Power MOSFET(0000'>vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(0000'>vdss:100V,Id(cont):34A,Rds(on):0.070惟))
n-channel Power MOSFET(0000'>vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(0000'>vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))

File Size 23.15K  /  2 Page

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