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For w ch Found Datasheets File :: 21901    Search Time::1.75ms    
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    2SJ221

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ221
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 1.67C/w, TC = 25C PDM uls e 0.03 h 1S P ot T 100 1m 10 ...
Description Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-channel MOS FET

File Size 47.48K  /  8 Page

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    2SJ222

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ222
OCR Text ...0 -55 to +150 Unit V V A A A w C C 2 2SJ222 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to ...ch-c (t) = S (t) * ch-c ch-c = 3.57C/w, TC = 25C PDM Pw 1 D = Pw T 0.03 0.02 0.01 t Pulse ho 1...
Description Silicon P-channel MOS FET

File Size 33.29K  /  6 Page

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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 3.13C/w, TC = 25C PDM Pw 1 D = Pw T 0.02 0.03 0.01 10 1S 1 lse...
Description Silicon P-channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ248

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ248
OCR Text ...0 -55 to +150 Unit V V A A A w C C 2 2SJ248 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to ...ch - c(t) = s(t) . ch - c ch - c = 5.0C / w. Tc = 25C Pw D= T P DM T Pw Tc = 25C 4 10.0 0....
Description Silicon P-channel MOS FET

File Size 32.65K  /  6 Page

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    2SJ319 2SJ319L 2SJ319S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ319 2SJ319L 2SJ319S
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C uls e PDM Pw T 0.03 1s h P ...
Description Power switching MOSFET
Silicon P-channel MOS FET

File Size 44.83K  /  9 Page

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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C PDM Pw T 0.03 D= Pw T 0.01 1...
Description Silicon P-channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...0 -55 to +150 Unit V V A A A w C C 2 2SJ387(L), 2SJ387(S) Electrical characteristics (Ta = 25C) Item Drain to source breakdown vo...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description Silicon P-channel MOS FET

File Size 46.71K  /  10 Page

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    K3502-01MR

Fuji Electric
Part No. K3502-01MR
OCR Text ... to ambient 1.79 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd...ch =25c t ch =125c v ds =0v v ds =25v v...
Description Search --To 2SK3502-01MR

File Size 129.75K  /  4 Page

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    Holtek Semiconductor Inc.
Part No. HT1381 HT1380
OCR Text ...c0 select read or write cycle r/w specify the register to be accessed a2 a1 a0 clock halt flag c for ic test only 1001xxx1 select single byt...ch 10 sec sec 000 w r 10000000 10000001 minutes 00~59 0 10 min min 001 w r 10000010 10000011 hours 0...
Description Serial Timekeeper chip(串行时钟芯片)

File Size 106.22K  /  10 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...0 -55 to +150 Unit V V A A A w C C 2 2SJ471 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to ...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/w, Tc = 25 C PDM Pw T D= 0.03 0.01 10 0....
Description Silicon P channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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