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  x8 4m Datasheet PDF File

For x8 4m Found Datasheets File :: 750    Search Time::1.14ms    
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Part No. K4S280432I-TL750
OCR Text ...-bit write operation ? dqm (x4,x8) & l(u)dqm (x16) for masking ? auto & self refresh ? 64ms refresh period (4k cycle) ? rohs compliant fo...4m x 8bit x 4 banks / 2m x 16bit x 4 banks sdram ordering information row & column address configur...
Description 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

File Size 338.13K  /  17 Page

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    SIEMENS AG
Part No. HYB39S128160CT HYB39S128800CT
OCR Text ...banks 8mbit x4, 4 banks 4mbit x8 and 4 banks 2mbit x16 respectively. these synchronous devices achieve high speed data transfer rates by ...4m x8 sdram hyb 39s128800ct-8 pc100-222-620 p-tsop-54-2 (400mil) 100 mhz 4b 4m x8 sdram hyb 39s...
Description 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4mBit × 8) Synchronous DRAM(128M(4× 4m× 8)同步动态RAM) 128兆位banks ×Mb × 8)同步DRAM28M的(4 × 4分列位8)同步动态RAM)的

File Size 285.67K  /  42 Page

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    K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4S641632H-TL70 K4S640432H-TC K4S640432H-TC75 K4S640432H-TL75 K4S640832H

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
Part No. K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4S641632H-TL70 K4S640432H-TC K4S640432H-TC75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TC60 K4S641632H-TC70 K4S641632H-TC75 K4S641632H K4S640432H-UL75 K4S640832H-UL75 K4S640432H-UC75 K4S640832H-UC75
OCR Text x8, x16) CMOS SDRAM 64mb H-die SDRAM Specification Revision 1.8 August 2004 * Samsung Electronics reserves the right to change p...4m x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power su...
Description D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
64mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS

File Size 142.21K  /  14 Page

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    HYE25L128800AC-8 HYB25L128800AC-7.5

Infineon Technologies AG
Part No. HYE25L128800AC-8 HYB25L128800AC-7.5
OCR Text ...formance:  8mbit x 16 & 16mbit x8 organisation  vdd = 2.5v / vddq = 1.8v (2.5v tolerant)  fully synchronous to positive clock edge  four...4m x 8 lp-sdram hyb 25l128800ac-8 pc100-222-620 bga-boc 100 mhz 4b 4m x 8 lp-sdram hyb 25l128160a...
Description 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 403.51K  /  51 Page

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    HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8

Infineon Technologies AG
Part No. HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8
OCR Text ...ask for read/write control (x4, x8)  data mask for byte control (x16)  auto refresh (cbr) and self refresh  suspend mode and power down m...4m x4 sdram hyb 39s64400et-7.5 pc133-333 p-tsop-54-2 (400mil) 133mhz 4b 4m x4 sdram hyb 39s64400e...
Description 4m X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54

File Size 371.32K  /  55 Page

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Part No. UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45256441G5-A80L-9JF UPD45256841G5-A10B-9JF
OCR Text ...) refresh and self refresh x4, x8, x16 organization single 3.3 v 0.3 v power supply lvttl compatible inputs and outputs 8,192 refresh...4m x 16 x 4 125 m pd45256163g5-a10-9jf 100 m pd45256163g5-a10b-9jf 100 m pd45256441g5-a80l-9jf 16m x...
Description 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
64m X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54

File Size 650.31K  /  84 Page

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    http://
Part No. K8D6316UBM-TI08 K8D638UTM-DI09 K8D638UTM-FC09 K8D638UTM-LI09 K8D638UTM-PC09 K8D638UTM-FI09 K8D638UTM-PI09 K8D638UTM-TI09 K8D638UTM-TC09 K8D638UTM-TI07 K8D6316UBM-TI07 K8D6316UTM-TI07 K8D638UBM-TI07 K8D638UBM-DC07 K8D6316UBM-DI08 K8D6316UBM-DC08 K8D638UBM-DC08 K8D6316UBM-DC09 K8D638UBM-DC09 K8D6316UBM-DI07 K8D6316UBM-FC07 K8D638UBM-FC07 K8D6316UBM-FC08 K8D638UBM-DI07 K8D638UBM-FC08 K8D6316UBM-FC09 K8D638UBM-DI08 K8D638UBM-DI09 K8D638UBM-FI07 K8D6316UBM-FI08 K8D6316UBM-DC07 K8D6316UBM-DI09 K8D6316UBM-PC07 K8D638UBM-PI07 K8D6316UBM-LI07 K8D6316UBM-PI08 K8D638UBM-LI08 K8D6316UBM-LI09 K8D638UBM-FI09 K8D6316UBM-FI07 K8D638UBM-FI08 K8D6316UBM-FI09 K8D6316UBM-PC08 K8D6316UBM-LC07 K8D638UBM-LC07 K8D638UBM-LI07 K8D6316UBM-LI08 K8D638UBM-PC07 K8D638UBM-PC08 K8D638UBM-PC09 K8D6316UBM-TC07 K8D638UBM-TC07 K8D638UBM-TI08 K8D6316UBM-TI09 K8D6316UBM-PC09 K8D6316UBM-PI07 K8D638UBM-PI08 K8D6316UBM-PI09 K8D6316UTM-LC080 K8D6316UBM-FC090
OCR Text x8/4m x16) dual bank nor flash memory revision history revision no. 0.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 remark preliminary final history initial draft final specification revised - release the stand-by current from typ. 5ua(max. 18ua) to typ. ...
Description 4m X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64m Bit (8M x8/4m x16) Dual Bank NOR Flash Memory

File Size 755.13K  /  48 Page

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    K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_L75 K4S281632K-UC/L50 K4S281632K-UC/L60 K4S280832K-UC/L75 K4S281632K-U

Samsung semiconductor
Part No. K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_L75 K4S281632K-UC/L50 K4S281632K-UC/L60 K4S280832K-UC/L75 K4S281632K-UC/L75
OCR Text ....... 8 11.0 DC Characteristics (x8) ...........................................................................................................4m x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM 1.0 Features JEDEC standard 3.3V power supply LVT...
Description 128Mb K-die SDRAM Specification

File Size 237.10K  /  15 Page

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    SHARP
Part No. LH28F400SUB-Z0
OCR Text x8 or x16 Operation * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirement for DC/DC Converter to Write/Erase 1 A B C D E A1 ...4m (512K x 8, 256K x 16) Flash Memory DQ8 - DQ15 DQ0 - DQ7 OUTPUT BUFFER OUTPUT BUFFER ...
Description 4m (512K ?8, 256K ?16) Flash Memory
4m (512K bb 8/ 256K bb 16) Flash Memory

File Size 308.10K  /  34 Page

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    HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800CTL-8A

Infineon Technologies AG
Part No. HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800CTL-8A
OCR Text ...ks x 16mbit x4, 4 banks x 8mbit x8 and 4 banks x 4mbit x16 respectively. these synchronous devices achieve high speed data transfer rates ...4m x 16 sdram hyb 39s256160ct-8 pc100-222-620 p-tsop-54-2 (400mil) 125mhz 4b x 4m x 16 sdram hyb 39s...
Description x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存

File Size 291.86K  /  49 Page

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