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  0.21-micron Datasheet PDF File

For 0.21-micron Found Datasheets File :: 2865    Search Time::4.047ms    
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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text 0.5 - 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features * High Associated Gain: 13.0 dB Typical at 4 GHz * ...21.3 -20.0 -17.3 -15.5 -14.9 -14.8 -14.7 -14.8 -14.8 -14.6 -14.5 S12 Mag. .024 .046 .086 .111 .137 ....
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text ...s GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems a...21 0.15 0.09 0.21 ATF-13100 Typical Performance, TA = 25C 2.0 20 12 10 15 GA (dB) GA GA 1.5...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Micro...21 3.10 2.80 2.60 2.39 2.17 2.00 1.89 1.76 1.66 Ang. 127 106 86 66 46 21 -4 -26 -48 -68 -90 -108 -12...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Pa...21 -3 -26 -34 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 4 V, IDS ...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ...S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 mA. This GaAs FET device has a nominal 0.3 micron gate le...
Description Surface Mount Gallium Arsenide FET for Oscillators

File Size 43.73K  /  3 Page

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text 0.5- 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features * Low Noise Figure: 0.9 dB Typical at 4 GHz * High Associat...21 9 -1 -10 -17 -28 -39 -50 Mag. .46 .42 .39 .35 .33 .30 .29 .26 .26 .26 .25 Ang. -23 -42 -70 -91 -1...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text 0.5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Outpu...21 0 0.1 1 FREQUENCY (GHz) 10 This GaAs FET device has a nominal 0.3 micron gate length using ...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text 0.5 - 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P 1 dB at 4 GHz * Hermetic...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text 0.5 - 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features * High Output Power: 20.5 dBm Typical P1 dB at 4 GH...21.6 -20.2 -19.2 -18.5 -17.8 -17.5 -16.9 S12 Mag. .025 .032 .049 .057 .068 .075 .083 .097 .110 .119 ...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

File Size 39.81K  /  3 Page

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features * High Output Power: 19.0 Bm Typical P 1 dB at 4 GHz ...21.6 -19.3 -17.7 -16.7 -16.1 -15.8 -15.5 -15.3 -15.4 -15.5 -15.7 S12 Mag. .025 .044 .083 .109 .131 ....
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

File Size 41.61K  /  4 Page

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