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  0.7ghz Datasheet PDF File

For 0.7ghz Found Datasheets File :: 863    Search Time::3.391ms    
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    2SC5415

SANYO[Sanyo Semicon Device]
Part No. 2SC5415
OCR Text ...038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Col...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 45.72K  /  6 Page

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    TIM7785-16UL

TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-16UL
OCR Text ... 42.5 8.5 4.4 35 -47 4.4 5.0 0.6 5.0 80 f = 7.7 - 8.5GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-So...
Description MICROWAVE POWER GaAs FET

File Size 69.02K  /  4 Page

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    FMM5017VF

Fujitsu Component Limited.
Fujitsu Media Devices Limited
Part No. FMM5017VF
OCR Text ...river or output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fuj...7GHz 0.04 0.02 0 10 25 14.7GHz 100 13.8GHz 180 15 10 14.7GHz 5 14.7GHz...
Description GaAs MMIC
From old datasheet system

File Size 86.68K  /  4 Page

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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ...D = 10V VGG = -5V f = 2.2GHz 35.0 29.0 Test Conditions Min. Limit Typ. Max. 2.2 36.0 30.0 1.5:1 1.1 35 Unit GHz dBm dB A mA G.C.P.: Gain ...7GHz 2.7GHz 2.2 10 25 2.6 2.3 2.5 2.4 +j250 2.6 2.4 2.7GHz 2.4 2.7GHz 2.0 2.3 1.7 8 16 1...
Description From old datasheet system
GaAs MMIC

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    FMM5057VF

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. FMM5057VF
OCR Text ...=10V VGG=-5V f=7.1 to 8.5GHz 32.0 23.0 VDD=10V,VGG=-5V 34.0 26.0 2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 1200 15.0 Unit V dBm mA ELECTRICAL ...7GHz 8.5GHz 50 Output P ow e r [dBm ] 32 40 P ow e r Adde d Efficie ncy[%] 28 30 ...
Description 14 POS DUAL ROW SOCKET
7.1-8.5GHz Power Amplifier MMIC
From old datasheet system

File Size 296.99K  /  8 Page

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    FMM5061VF

Fuji Electric
Part No. FMM5061VF
OCR Text ... - CASE STYLE: VF ESD Class 0 G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level ~ 199 V Note : Based on EIAJ ED-4701 C-11...7GHz 13.3GHz 2500 Drain Current [mA] 2300 2100 1900 1700 1500 1300 1100 -10 -5 0 5 10 15 36 34 Ou...
Description X-Band Power Amplifier MMIC

File Size 170.74K  /  14 Page

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    MGF7176C 7176C

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. MGF7176C 7176C
OCR Text ....0V, Standard bias*,VT=3.0V,VGC=0.0V, Test conditions *Standard bias : VD1,VD2,VD3=3V VD_NVG,VD_LEV=3V MIN 1750 Limits TYP MAX Unit - 560 28 18 1780 MHz - - mA dB dB Ga Gain Standard bias*,VGC=3V,VT=3V, ...
Description 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 19.71K  /  2 Page

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...oise Figure (dB) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05...7GHz to 2.2GHz Application Schematic VD C4 C3 L1 C1 RF IN Package Backside Connect to RF/D C groun...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text ...l Products IC Hanbook, HB2480-3.0 DS4239 - 3.0 March 1999 The SP8855E is one of a family of parallel load synthesisers containing all the...7GHz See Fig. 3 Reference division ratio 2 at frequencies >50MHz also see Note 1. Sine Wave 10-1...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text ...N. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 dBm dB A % dBc A C f =10.7-11.7GHz add IM3 -42 VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage S...
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 142.06K  /  5 Page

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