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  00ns Datasheet PDF File

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    M27V512-200N1 M27V512

ST Microelectronics
STMICROELECTRONICS
Part No. M27V512-200N1 M27V512
OCR Text ...ransition e = v il , g = v il 00ns two line output control because eproms are usually used in larger memory arrays, the product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. the two line...
Description NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28

File Size 152.43K  /  16 Page

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    White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
Part No. WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128K8-45CLCA WMS128K8-35CLCA WMS128K8-25CLCA WMS128K8-20CLC WMS128K8-15CLM WMS128K8-17CLC WMS128K8-17CLM WMS128K8-17CLI WMS128K8-15CLI WMS128K8-45DRCA WMS128K8L-35CLIA WMS128K8-25DJM WMS128K8-17FC WMS128K8L-25DJCA WMS128K8L-15CLM WMS128K8-17DJIA WMS128K8-17DJC WMS128K8-55FEI WMS128K8-55FM WMS128K8L-35CLCA WMS128K8L-15DJM WMS128K8L-15DJMA WMS128K8L-17DJM WMS128K8L-17DJIA WMS128K8L-25DJIA WMS128K8L-55DJIA WMS128K8L-20DJIA WMS128K8L-15DJIA
OCR Text ... from address change t oh 00000 00ns chip select access time t acs 15 17 20 25 35 45 55 ns output enable to output valid t oe 10 10 12 15 20 25 30 ns chip select to output in low z t clz 1 33333 33ns output enable to output in low z t olz 1...
Description 55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691

File Size 206.13K  /  10 Page

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    Supertex, Inc.
Part No. WS512K48-20G5WX WS512K48-25G6WX WS512K48-XG4WX WS512K48-17G4WX
OCR Text ...old from address change t oh 00 00ns chip select access time t acs 17 20 25 35 ns output enable to output valid t oe 10 12 15 20 ns chip select to output in low z t clz 1 33 33ns output enable to output in low z t olz 1 00 00ns chip disable...
Description 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时0ns
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时5ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间25ns的)
SRAM MCP SRAM的MCP
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时7ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间17ns))

File Size 81.03K  /  5 Page

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    意法半导
Part No. M27V801
OCR Text ...ransition e = v il ,gv pp =v il 00ns notes. 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . 2. sampled only, not 100% tested. table 8a. read mode ac characteristics (1) (t a = 0 to 70 c...
Description 8Mbit (1Mb x 8) Low Voltage UV EPROM and OTP EPROM(8M位低压可紫外擦除EPROM和一次可编程EPROM)

File Size 109.36K  /  16 Page

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