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  1805-1880 Datasheet PDF File

For 1805-1880 Found Datasheets File :: 567    Search Time::2.234ms    
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    Motorola Semiconductor Products Inc
Part No. MHW1810-1
OCR Text ...plifiers * Specified 26 Volts, 1805-1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts (MHW1810-1) Power Gain = 34 dB Typ @ 10 Watts (MHW1810-2) Efficiency = 34% Min @ 10 Watts * 50 Input/O...
Description MICROWAVE/MILLIMETER WAVE AMPLIFIER,HYBRID,MOT CASE,METAL
From old datasheet system

File Size 117.90K  /  8 Page

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    Freescale (Motorola)
Part No. MRF18060ALSR3 MRF18060ASR3
OCR Text ...rformance, full frequency band (1805 ? 1880 mhz) power gain ? 13 db (typ) @ 60 watts efficiency ? 45% (typ) @ 60 watts ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd pr...
Description 1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs

File Size 247.08K  /  12 Page

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    HHM1930A1

TDK Electronics
Part No. HHM1930A1
OCR Text ...rn loss at unbalanced port (db) 1805 to 1880 10 phase balance (deg.) 1805 to 1880 175 185 amplitude balance (db) 1805 to 1880 C1.0 1.0 insertion loss (db) 1805 to 1880 0.55 operating temperature storage temperature c c C40 to ...
Description Multilayer Balun

File Size 66.06K  /  6 Page

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    Infineon Technologies A...
Part No. PXAC182908FV PXAC182908FV-15
OCR Text ...power rf ldmos fet 240 w, 28 v, 1805 C 1880 mhz description the pxac182908fv is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 347.25K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BLF7G20L-250P BLF7G20LS-250P
OCR Text 1805 mhz to 1880 mhz. [1] test signal: 3gpp; test model 1;64 dpch; par = 8.4 db at 0.01% probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high-efficiency ? low r th providing excellent thermal stability ? designed ...
Description Power LDMOS transistor

File Size 341.60K  /  14 Page

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    TA0363F

TAI-SAW TECHNOLOGY CO., LTD.
Part No. TA0363F
OCR Text ...z) - 1842.5 - insertion loss (1805~1880 mhz) il (db) - 2.2 3.8 amplitude ripple (1805~1880 mhz) (db) - 1.3 2.3 attenuation (reference level from 0 db) d.c. ~ 1500 mhz (d...
Description SAW Filter 1842.5 MHz SMD 3X3 mm

File Size 249.01K  /  7 Page

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    TA0363A

TAI-SAW TECHNOLOGY CO., LTD.
Part No. TA0363A
OCR Text ...z) - 1842.5 - insertion loss (1805~1880 mhz) il (db) - 2.2 3.8 amplitude ripple (1805~1880 mhz) (db) - 1.3 2.3 attenuation (reference level from 0 db) d.c. ~ 1500 mhz (db) 20.0 ...
Description SAW Filter 1842.5 MHz SMD 3X3 mm

File Size 255.77K  /  7 Page

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    Fujitsu, Ltd.
FUJITSU LTD
Part No. FAR-F6CE-1G8425-L2YB-T FAR-F6CE-1G8800-L2XA-T
OCR Text ...9 - db 1500-1670 mhz 20 22 - db 1805-1880 mhz 712 - db 1880-2200 mhz 20 23 - db 3420-3570 mhz 25 31 - db 5130-5355 mhz 15 25 - db inband vswr 1710-1785 mhz - 2.5 3.0 - input power p in 1710-1785 mhz - - 20 mw item symbol condition rating un...
Description SAW FILTER

File Size 453.01K  /  21 Page

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    Infineon Technologies A...
Part No. PXAC182002FC PXAC182002FC-15
OCR Text ...power rf ldmos fet 180 w, 28 v, 1805 C 1880 mhz description the pxac182002fc is a 180-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 350.19K  /  7 Page

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    BGY1816S

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BGY1816S
OCR Text ...ting equipment operating in the 1805 to 1880 MHz frequency band. DESCRIPTION The BGY1816S is a three-stage UHF amplifier module in a SOT501A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted togethe...
Description UHF amplifier module

File Size 67.96K  /  12 Page

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