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  27.001 Datasheet PDF File

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200 ) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200 ) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1 .39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...orque, 6-32 or M3 srew Max. 27 19 108 136 0.91 20 350 12 13.6 2.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W ...001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ... 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... page 8 www.irf.com 1 02/27/01 IRF3703 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltag...001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.0...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...-- nC VDS = 15V --- VGS = 4.5V 27 VGS = 0V, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 1...001 0.01 1 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Tran...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...- --- S VDS = 15V, ID = 30A --- 27 41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 10V --- 11 --- VD...001 0.01 0.1 PDM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum ...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...stance (N orm alized) I D = -27 A -I D , D rain-to -So urc e C urre nt (A ) 1.5 10 1.0 0.5 1 4 5 6 7 V DS = -2 5 V 2...001 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...--- --- --- --- --- --- --- 6.4 27 37 25 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.11 VGS = 10V,...001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 1...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...ns) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0 (1) P 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OU...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

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