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  28m Datasheet PDF File

For 28m Found Datasheets File :: 363    Search Time::1.422ms    
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    ZETEX[Zetex Semiconductors]
Part No. ZXTN19055DZTA ZXTN19055DZ
OCR Text ...VCE(sat) < 60mV @ 1A RCE(sat) = 28m PD = 2.1W Description Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power ...
Description 55V, NPN medium power transistor

File Size 364.89K  /  6 Page

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    IRFZ34VPBF

International Rectifier
Part No. IRFZ34VPBF
OCR Text ...SFET D VDSS = 60V RDS(on) = 28m G S ID = 30A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined w...
Description 60V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package

File Size 170.84K  /  8 Page

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    AOP601L AOP601

Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
Part No. AOP601L AOP601
OCR Text ....5A (VGS = 10V) -6.6A RDS(ON) < 28m < 35m (VGS = -10V) < 43m < 58m (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S2 G2 S1/A G1 1 2 3 4 8 7 6 5 D2 D2 D1/K D1/K D2 D1 K P-ch N-ch G2 S2 G1 S1 A Absolute Maximum Rat...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 142.51K  /  8 Page

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    AOP605L AOP605

AOSMD[Alpha & Omega Semiconductors]
Part No. AOP605L AOP605
OCR Text ...V) -6.6A (VGS = -10V) RDS(ON) < 28m (VGS = 10V) < 35m (VGS = -10V) < 43m (VGS = 4.5V) < 58m (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Ma...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 181.19K  /  7 Page

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    CEM8968

Chino-Excel Technology
Part No. CEM8968
OCR Text 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired....
Description Dual Enhancement Mode Field Effect Transistor (N and P Channel)

File Size 540.40K  /  7 Page

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    Interpoint Corporation
Part No. MFC
OCR Text ... he S MULTIPLE OUTPUT (1-8) 28m FILTERED, VIN, co CONFIGURABLE . FACTORY U t4 DC/DC CONVERTERS e MFC SERIES UP TO 30 WATTS VDC OUTPUT Mix or match voltages and power to configure from one to eight outputs. Size (max):MFCG-H 3....
Description DC/DC Converter MFC Series

File Size 210.37K  /  15 Page

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    ILX555K

Sony Corporation
Part No. ILX555K
OCR Text ...pitch) * Distance between line: 28m (8 lines) * Single-sided readout * Ultra low lag * Single 12V power supply * Maximum data rate: 5MHz/Color * Input Clock Pulse: CMOS 5V drive * Number of output 3 (R, G, B) * Package: 22 pin Plastic DIP (...
Description 10680 pixel × 3 line CCD Linear Sensor (Color)
10680pixel x 3line CCD Linear Sensor(Color)
10680 pixel 】 3 line CCD Linear Sensor (Color)
From old datasheet system
10680 pixel 3 line CCD Linear Sensor (Color)

File Size 102.50K  /  11 Page

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    FDB3672

FAIRCHILD[Fairchild Semiconductor]
Part No. FDB3672
OCR Text 28m Features * rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A * Qg(tot) = 24nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) * Qualifi...
Description 100V N-Channel PowerTrench MOSFET
From old datasheet system

File Size 207.69K  /  11 Page

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    CDRH124

Sumida Corporation
Part No. CDRH124
OCR Text ...70 560 680 820 1.0m 26m 26m 28m 28m 38m 38m 50m 57m 50m 4.6 Measuring Freq. (L) / L D.C.R.( ) : Max.(Typ.) Temperature Rise Rated Current (A) * 5 CDRH124 100 kHz Tolerance of Inductance / CDRH124 3.9 H - 330 H 2...
Description POWER INDUCTORS (SMD Type)

File Size 256.23K  /  1 Page

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    AP9926EO

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Advanced Power Electronics Corp.
Part No. AP9926EO
OCR Text ...DSS RDS(ON) S1 D1 G1 S1 20V 28m 4.6A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effe...
Description Power MOSFETs from APEC provide the designer with the best combination of fast switching 来自亚太经合组织MOSFET的功率提供了快速开关设计的最佳组
From old datasheet system

File Size 80.33K  /  6 Page

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For 28m Found Datasheets File :: 363    Search Time::1.422ms    
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