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Integrated Device Technology, Inc.
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Part No. |
IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162374CTPAB IDT54FCT162374ETPAB IDT54FCT162374ATPAB IDT54FCT162374ATPVB IDT54FCT16374CTPAB IDT54FCT16374ETPAB IDT54FCT16374CTPV IDT54FCT162374TEB IDT54FCT16374CTPF IDT54FCT162374TPFB IDT54FCT162374ATEB IDT54FCT16374ATPAB IDT54FCT162374ETPV IDT54FCT16374ETE IDT54FCT162374CTPVB IDT54FCT162374CTPFB
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Description |
FAST CMOS 16-bit REGISTER (3-STATE) Variable capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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File Size |
126.14K /
8 Page |
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Maxwell Technologies, Inc
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Part No. |
28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28LV010RT4DB20 28LV010RT4DB25 28LV010RT4DB-20 28LV010RPFS20 28LV010RPFS25 28LV010RT1DB25 28LV010RT1DE25 28LV010RT2DS20 28LV010RT2DS25 28LV010RT2DE20 28LV010RT2DB-20 28LV010RT2DS-20 28LV010RT2DB-25 28LV010RT2DE25 28LV010RT2DI20 28LV010RT2DB25 28LV010RT2DI-25 28LV010RT2DB20 28LV010RT2DI-20 28LV010RT2DE-20 28LV010RT4DE-20 28LV010RT4DS25 28LV010RT4DE25 28LV010RT4DI-20 28LV010RT4DI-25 28LV010RT4DI20 28LV010RT4DI25 28LV010RT4DS-20 28LV010RT4DS-25 28LV010RT4DS20 28LV010RT1FI-25 28LV010RT1FS-20 28LV010RT1FS-25 28LV010RT2FS25 28LV010RT2FS-20 28LV010RT2FI-20 28LV010RT1DE-20 28LV010RPFS-20 28LV010RT1DB20 28LV010RT2FB20 28LV010RT2FE-25 28LV010RT1DI-20 28LV010RT2FS20 28LV010RT4FS-20 28LV010RT2FB-25 28LV010RT2FB25 28LV010RT2FE-20 28LV010RT2FE20 28LV010RT1DS-20 28LV010RT2FE25 28LV010RT1FS20 28LV010RT1FS25 28LV010RT2FS-25 28LV010RT4FS20 28LV010RT1DS25 28LV010RT1FB-20 28LV010RT1FB25 28LV010RT1DB-20 28LV010RT1DS20 28LV010RT4FS25 28LV010RPFB25 28LV010RPDI25 28LV010RPDB20 28LV010RPDE-20 28LV010RPDI-20 28LV010RT1FI-20 28LV010RPFB-20 28LV010RT4FE-20 28LV010RT4FI20 28LV010RPFI-20 MAXWELLTECHNOLOGIES-28LV010RPFI-20 28LV010RPDI20
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Description |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; tolerance, :10%; tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; tolerance, :20%; tolerance, -:20%; Temp, op. max:85(degree C); CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; tolerance, :10%; tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; tolerance, :10%; tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; tolerance, :10%; tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; tolerance, :20%; tolerance, -:20%; Temp, op. max:125(degree C); Ceramic Capacitor Array; Capacitor Type:Chip Array; capacitance:22pF; capacitance tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; tolerance, :10%; tolerance, -:10%; Temp, op. max:125(degree C);
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File Size |
360.92K /
19 Page |
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PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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Part No. |
MA840 MA2C840
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Description |
Variable capacitance Diodes VHF-UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE capacitance DIODE, DO-34
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File Size |
42.02K /
2 Page |
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it Online |
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http:// Maxwell Technologies, Inc
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Part No. |
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C010TRT2DI-20 28C010TRPDE-15 28C010TRPDE-12 28C010TRPDB-15 28C010TRT4DB-15 28C010TRT4DE-12 28C010TRT4DE-15 28C010TRT4DS-15 28C010TRT4DB-20 28C010TRT4FB-12 28C010TRT4FE-12 28C010TRT4FE-15 28C010TRT4DI-12 28C010TRT4DS-12 28C010TRT4FI-15 28C010TRT4FS-15 28C010TRT4FI-12 28C010TRTDB-15 28C010TRTDE-15 28C010TRTFE-12 28C010TRTFB-12 28C010TRTFS-15 28C010TRTFB-15 28C010TRTFI-12 28C010TRPFE-20 28C010TRPDB-12 28C010TRT1FS-20 28C010TRT1FI-12 28C010TRT2FI-15 28C010TRPFI-15 28C010TRPFI-12 28C010TRT2DE-15 28C010TRT1FI-20 28C010TRT4DI-20 28C010TRT1FB-15 28C010TRT2DE-20 28C010TRT2DB-15 28C010TRT2DB-20 28C010TRT2DS-20 28C010TRPFS-12 28C010TRTFE-15 28C010TRTFE-20 28C010TRT2FS-12
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Description |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECtoR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; capacitance:0.068uF; capacitance tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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File Size |
356.86K /
19 Page |
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Mitsubishi Electric Corporation
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Part No. |
MH32S72APHB-7 MH32S72APHB-8 MH32S72APHB-6
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Description |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:16VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; capacitance:6900uF RoHS Compliant: Yes Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:100VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; capacitance:78uF RoHS Compliant: Yes 2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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File Size |
715.44K /
55 Page |
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