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  3.0-3.8ghz Datasheet PDF File

For 3.0-3.8ghz Found Datasheets File :: 1181    Search Time::1.547ms    
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    BFR280 Q62702-F1298

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SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...FR 280 REs Q62702-F1298 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cut...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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    Infineon Technologies A...
Part No. BGA416
OCR Text ...mplifier bga416 vps05178 2 1 3 4 features ?g ma = 23db at 900mhz  ultra high reverse isolation, 62 db at 900mhz  low noise figure, f...0.5 ma device current 1) i d 20 ma input power p in 8dbm total power dissipation, t s < 123 c 2)...
Description RF Cascode Amplifier

File Size 66.78K  /  8 Page

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    MGF1801 MGF1801B 1801B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801 MGF1801B 1801B
OCR Text ...and stability @f=8GHz 0.50.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.50.2 QUALITY GRADE * IG RECOMMENDED BIAS CONDITIONS * VDS=6V * ID=100mA * Refer to Bias Procedure 1 GA...
Description TAPE CARRIER MICROWAVE POWER GaAs FET
From old datasheet system

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    ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A

Nais(Matsushita Electri...
Panasonic, Corp.
OSRAM GmbH
NAIS[Nais(Matsushita Electric Works)]
Matsushita Electric Works(Nais)
Part No. ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A03 ARJ20A03X ARJ20A03Z ARJ20A12 ARJ20A12X ARJ20A12Z ARJ20A24 ARJ20A24X ARJ20A24Z ARJ20A4H ARJ20A4HX ARJ20A4HZ ARJ2203 ARJ2203X ARJ2203Z ARJ2212 ARJ2212X ARJ2212Z ARJ2224 ARJ2224X ARJ2224Z ARJ224H ARJ224HX ARJ224HZ ARJ22A03 ARJ22A03X ARJ22A03Z ARJ22A12 ARJ22A12X ARJ22A12Z ARJ22A24 ARJ22A24X ARJ22A24Z ARJ22A4H ARJ22A4HX
OCR Text ... 50 , V.S.W.R. &1.25) 30 V DC 0.3 A DC Max. 1.25 Max. 0.5dB Min. 35dB Min. 30dB Characteristics Initial insulation resistance*1 Min. 500 M (at 500 V DC) Between open contacts 500 Vrms Initial breakdown Between contact sets 500 Vrms volt...
Description    SMD RELAYS WITH 8GHz CAPABILITIES
SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能

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    MT4S200U

Toshiba Semiconductor
Part No. MT4S200U
OCR Text ...9.5dB (@f=5.8GHz) Marking 4 3 P USQ JEDEC JEITA 1 2 1.Collector 2.Emitter 3.Base 4.Emitter 2-2K1E Maximum Ratings ...0.006 g (typ.) Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB) 1 2006-12-26 ...
Description UHF-SHF Low Noise Amplifier Application

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    Q62702-F1086 BFR93A

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1086 BFR93A
OCR Text ...FR 93A R2s Q62702-F1086 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cut...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

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    MGF1601B 1601B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B 1601B
OCR Text ...ers and oscillators. 2.50.2 3 QUALITY GRADE * GG RECOMMENDED BIAS CONDITIONS * VDS=6V * ID=100mA * Refer to Bias Procedure 1 GA...0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbo...
Description From old datasheet system
MICROWAVE POWER GaAs FET

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    ST Microelectronics
Part No. START540
OCR Text 3 2002 start540 npn silicon rf transistor sot343 (sc70) order code start540tr branding 540 applications ? lna for gsm/dcs, dect, pdc, pcs, ...0.9db @ 1.8ghz, 5ma, 2v ? high output ip3 = 24dbm @ 1.8ghz, 20ma, 2v ? good ruggedness bvceo = ...
Description NPN Silicon RF Transistor

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    2070015177 SOM-5897E4C-U0A1E SOM-5897E4C-U7A1E SOM-5897E4C-U8A1E SOM-5897E4X-U0A1E

Advantech Co., Ltd.
Part No. 2070015177 SOM-5897E4C-U0A1E SOM-5897E4C-U7A1E SOM-5897E4C-U8A1E SOM-5897E4X-U0A1E
OCR Text ...2.0ghz 2.8ghz turbo boost freq. 3.5ghz 2.8ghz 3.4ghz 2.7ghz - - - 3.7ghz 2.8ghz 3.7ghz core/tread 4/8 4/8 4/4 4/4 2/4 2/4 2/2 4/8 4/8 4/8 ll...0, share memory up to 1024mb 3d/hw acceleration hw encode: h.265/hevc, h.264, mpeg2, hw decode: h.26...
Description Processors COM Express Basic Module

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    Infineon
Part No. BFS466L6
OCR Text 3 4 5 6 npn silicon rf twin transistor preliminary data ? low voltage/ low current applications ? ideal for vco modules and low noise ampl...0 db at 1.8 ghz ? world's smallest smd 6-pin leadless package ? built in 2 transitors (tr1: die as...
Description ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages

File Size 86.85K  /  5 Page

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For 3.0-3.8ghz Found Datasheets File :: 1181    Search Time::1.547ms    
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