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4.75.187 Datasheet PDF File

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				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	MTD2003
OCR Text	...cy fixed, separate-oscillation) 4-phase input (with inhibit for simultaneously turn ON) Current levels can be selected in 2 bit digital sign...75 -100 0.525 0.378 0.187 650 -10 Electrical Characteristics (Ta=25) Item Output Saturation Volt...
Description	IC,MOTOR CONTROLLER,BIPOLAR,ZIP,27PIN Stepping Motor Driver ICs
File Size	423.60K / 2 Page	View it Online	Download Datasheet

				RECTRON[Rectron Semiconductor]
Part No.	SF164C SF163C SF165C SF166C SF161C SF162C
OCR Text	...) .610 (15.5) .583 (14.8) .187 (4.7) .148 (3.8) .053 (1.3) .047 (1.2) TO-220 MECHANICAL DATA * * * * * Case: TO-220 molded plastic Ep...75) .157 (4.0) .051 (1.3) .043 (1.1) .035 (0.9) .102 (2.6) .091 (2.3) .583 (14.8) .531 (13.5) ...
Description	GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes) 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
File Size	24.57K / 2 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN8746 AN8746SA
OCR Text	4-channel actuator/motor drive IC by DMOS direct PWM method for a portable CD player. 11.00.3 32 17 Unit: mm s Features * RON = 1.8 ...75 -55 to +150 Unit V IDD PD Topr Tstg *1 mA mW C C Operating ambient temperature Stora...
Description	PWM driver IC for portable CD player
File Size	51.99K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...75 11 12 30 6 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise T...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	...ER MOSFETS 500 48 192 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Pow...75 25 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Tur...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...0 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...0 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...m Case for 10 Sec. M 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C)...75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

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