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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M11B2VFR APT10M11LVFR
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| OCR Text |
... 300 95 110 16 33 46 8
10300 4480 1770 450 145 165 32 66 70 16
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbo... |
| Description |
High Voltage N-Channel enhancement mode power MOSFET
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| File Size |
64.99K /
4 Page |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFY196
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| OCR Text |
...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A03 1998-04-01
BFY 196
1.05 0.25 1.02 0.1 2 0.76
0.5 0.1
XY 3 4 1.78
4.2 -0.2
1
0.1 +0.... |
| Description |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
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| File Size |
95.05K /
5 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
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| Part No. |
BXY42-T1 BXY42 BXY42-T BXY42-T1H
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| OCR Text |
...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A03 1998-04-01
BXY 42
Figure 1 Symbol
T Package Millimetre min. max. 1.45 1.35 0.40 1.30 1.15 -
... |
| Description |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)
Publications, Books
From old datasheet system
SILICON, PIN DIODE
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| File Size |
79.56K /
6 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BXY43-T1 BXY43 BXY43-FP BXY43-P1 BXY43-T
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| OCR Text |
...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A03 1998-04-01
BXY 43
Figure 1 Symbol
T Package Millimetre min. max. 1.45 1.35 0.40 1.30 1.15 -
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| Description |
PUBLICATIONS, BOOKS RoHS Compliant: NA
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
From old datasheet system
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| File Size |
98.81K /
8 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BXY43P-FP BXY43P
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| OCR Text |
...eting division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
3
Draft A02 1998-04-01
BXY 43P
Figure 1 Symbol
FP Package Millimetre min. max. 3.55 3.30 1.70 0.65 0.15 0.4... |
| Description |
Publications, Books RoHS Compliant: NA
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
From old datasheet system
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| File Size |
76.73K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M11JVR
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| OCR Text |
... 300 95 110 16 48 51 9
10300 4480 1770 450 145 165 32 96 75 18
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Sy... |
| Description |
POWER MOS V 100V 144A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
70.67K /
4 Page |
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it Online |
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Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DSF21035SV35 DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34
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| OCR Text |
...e = 65oC Tcase = 65oC 3000 4710 4480 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase ... |
| Description |
Fast Recovery Diode 3000 A, 3500 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode 3000 A, 3200 V, SILICON, RECTIFIER DIODE
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| File Size |
63.94K /
7 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3
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| OCR Text |
4480.2
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli... |
| Description |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
70.80K /
8 Page |
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it Online |
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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
LIS3L02DQ
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| OCR Text |
...FS
3
% FS
280 560 1120 4480 50
Hz Hz Hz Hz ms
Notes 1 Typical specifications are not guaranteed 2 Guaranteed by wafer level test and measurement of initial offset and sensitivity
3/19
LIS3L02DQ
ABSOLUTE MAXIMUM RATING ... |
| Description |
INERTIAL SENSOR: 3Axis - 2g DIGITAL OUTPUT LINEAR ACCELEROMETER 惯性传感器Axis -第二代数字输出线性加速度
From old datasheet system
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| File Size |
161.13K /
19 Page |
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it Online |
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Price and Availability
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