512mbit xdr tm dramc-die pdf Datasheet P5 Description --- IC-ON-LINE


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512mbit xdr tm dramc-die Datasheet PDF File

For 512mbit xdr tm dramc-die Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Hittite Microwave Corporation International Rectifier
Part No.	IRG4CC50WB
Description	IGBT Die in Wafer Form 600 V Size 5 WARP Speed IRG4CC50WB IGBT Die in Wafer Form
File Size	23.15K / 1 Page	View it Online	Download Datasheet

				http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
Description	; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM 512mbit gDDR2 SDRAM
File Size	1,416.01K / 64 Page	View it Online	Download Datasheet

				International Rectifier, Corp. TE Connectivity, Ltd. Kingbright, Corp. NIC Components, Corp.
Part No.	7703403UA 7703401YA 77034042A 7703404MA 7703404NA 7703404TA 7703404UA 7703404XA 7703404YA 7703404ZA 5962-7703404VXA 5962-7703404VYA 7703401UA 7703408YA 7703405NA 7703401MA 7703405TA
Description	Negative Adjustable Voltage Regulator 15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE 15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R 15 HZ, 90DB REJECTION BTW 59 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, T/R 60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, TUBE 60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE 60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R Low-cost volatile, Digital Potentiometer, -40C to 125C, 8-SOIC 150mil, TUBE PRODUCT TO FREQUENCY CONVERTER WHICH IS USED TO POWER METERING APLICATIONS, -40C to 85C, 24-SSOP 208mil, TUBE 积极可调电压稳压 18 BIT DEL-SIG A/D CONVERTER, -40C to 125C, 6-SOT-23, T/R 积极可调电压稳压 Positive Adjustable Voltage Regulator 积极可调电压稳压 ENERGY METER IC, GAIN 1:16, 500:1 DYNAMIC RANGE, -40C to 85C, 24-SSOP 208mil, T/R 积极可调电压稳压
File Size	1,150.15K / 44 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S511632D-KC/L1L K4S511632D-KC/L75 K4S511632D-KC/L7C K4S511632D-KC1H
Description	32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
File Size	44.56K / 9 Page	View it Online	Download Datasheet


Part No.	AM29SL160CB-120EC AM29SL160CB-120EI AM29SL160CB-120WCC AM29SL160CB-120WCI AM29SL160CT-120WCC AM29SL160CT-120EC AM29SL160CT-120EI AM29SL160CB-100EC AM29SL160CB-100WCC AM29SL160CT-90WCC AM29SL160CB-90EI AM29SL160CB-90WCC AM29SL160CB-150WCC AM29SL160CT-100WCC AM29SL160CT-150WCC AM29SL160CB-150EC AM29SL160CB-150EI AM29SL160CT-150EC AM29SL160CB-100WCI AM29SL160CT-90EC AM29SL160CB-100EI
Description	8 TSSOP,PB/HALO FREE,AUTO,2.7V(SERIAL EE) 8 PDIP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) 10MS, DBGA2, IND TEMP, GREEN, 1.8V(SERIAL EE) DIE SALE,1.8V, 7MIL(SERIAL EE) 10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE) 10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE) 10MS, 8 SOIC, COM TEMP, 5V(SERIAL EE) 10MS, 8 SOIC, IND TEMP, 2.7V(SERIAL EE) x8/x16 Flash EEPROM x8/x16闪存EEPROM
File Size	558.79K / 50 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
Description	DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
File Size	216.51K / 24 Page	View it Online	Download Datasheet

				International Rectifier IXYS[IXYS Corporation]
Part No.	IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC150 IRF153 IRF151
Description	(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
File Size	45.07K / 1 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB HMT41GU6MFR8A HMT41GU6MFR8A-G7 HMT41GU6MFR8A-H9 HMT41GU6MFR8A-PB HMT351U6CFR8C-PB HMT351U6CFR8C-RD HMT351U6CFR8C-H9 HMT325U7CFR8C-H9 HMT325U7CFR8C-RD HMT325U7CFR8C-PB HMT325U6CFR8C-RD HMT325U6CFR8C-PB HMT325U6CFR8C-H9
Description	DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
File Size	994.42K / 57 Page	View it Online	Download Datasheet

				Toshiba Corporation
Part No.	TH58512FTI
Description	A Single 3.3V 512mbit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
File Size	1,389.16K / 33 Page	View it Online	Download Datasheet

				Toshiba Corporation
Part No.	TH58512DC
Description	A Single 3.3V 512mbit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
File Size	1,008.01K / 33 Page	View it Online	Download Datasheet

For 512mbit xdr tm dramc-die Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |