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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HUF75333S3S HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3ST
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OCR Text |
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET(R) process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re... |
Description |
55V N-Channel UltraFET Power MOSFET 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
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File Size |
280.56K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDB66N15TM FDB66N15
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OCR Text |
66A, 150V, RDS(on) = 0.036 @VGS = 10 V * Low gate charge ( typical 49 nC) * Low Crss ( typical 78.5 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field ... |
Description |
150V N-Channel MOSFET
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File Size |
625.77K /
8 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
BSP297
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OCR Text |
... V
Reverse diode dv/dt
IS=0.66A, V DS=160V, di/dt=200A/s, Tjmax=150C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation
TA=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
P... |
Description |
SIPMOS Small-Signal-Transistor
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File Size |
187.50K /
8 Page |
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it Online |
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http://
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Part No. |
MJH16006
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OCR Text |
...tion voltage i c = 5a; i b = 0.66a b i c = 5a; i b = 0.66a,t b c =100 3.0 3.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.66a b i c = 5a; i b = 0.66a,t b c =100 1.5 1.5 v i cev collector cutoff... |
Description |
isc Silicon NPN Power Transistor
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File Size |
77.43K /
2 Page |
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it Online |
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Price and Availability
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