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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM150DU-24NFH
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| OCR Text |
... by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC' measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel,... |
| Description |
HIGH POWER SWITCHING USE
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| File Size |
65.97K /
4 Page |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM600TU-2A
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| OCR Text |
... Shin-Etsu Chemical Co., Ltd "G-746".
May 2006
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Chip 600 500 VGS = 20V 15V 600 12V 500 10V VDS =... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE 大功率开关使用绝缘包
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| File Size |
105.14K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM600TU-3A FM600TU-07A
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| OCR Text |
... Shin-Etsu Chemical Co., Ltd "G-746".
May 2006
MITSUBISHI <MOSFET MODULE>
FM600TU-3A
HIGH POWER SWITCHING USE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Chip 600 500 VGS = 20V 15V 10V 600 12V 500 VDS =... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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| File Size |
105.03K /
5 Page |
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it Online |
Download Datasheet |
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OKI electronic components
OKI[OKI electronic componets]
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| Part No. |
MG65P MG63P MG64P
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| OCR Text |
...848,755 969,624 1,094,861 1,223,746 1,355,558 1,489,579 1,625,088 1,761,365 1,897,690 2,033,342 MG64P 4LM Usable Gates 22,344 65,664 131,784...960-9660 Fax: 770/960-9682
Oki Web Site:
http://www.okisemi.com
Oki FAX Service:
Call toll f... |
| Description |
0.25m Embedded DRAM/ Customer Structured Arrays
0.25レm Embedded DRAM/ Customer Structured Arrays
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| File Size |
125.78K /
22 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MHVIC915NR2
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| OCR Text |
... = 34 dBm, Full Frequency Band (746 to 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 31 dB Power Added Efficiency -- 21% ACPR @ 750 kHz Offset -- - 50 dBc in 30 kHz Bandwidth Driver Applications * Ty... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
489.75K /
16 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
... MHVIC915R2/D
The RF Line
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola's newest high voltage (26 to 28 Volts)... |
| Description |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
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California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
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| Part No. |
NE67483B NE67400
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| OCR Text |
...9.8 101.8 92.7 82.3 MAG 3.834 3.746 3.694 3.630 3.552 3.417 3.265 3.107 3.067 2.929 2.804 2.694 2.538 2.500 2.399 2.349 2.271 2.175 2.129 2.050 1.999 1.943 1.923 1.884 1.850 1.820 1.778 1.730 1.708 1.678 1.665 1.654 1.636 1.631 1.599 1.595 ... |
| Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
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| File Size |
103.82K /
7 Page |
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it Online |
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Price and Availability
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