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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFH50US60S
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| OCR Text |
... ta at dIF/dt = 200A/s, 500A/s, 800a/s 30 40 50 60 70 80 90 100 tb at dIF/dt = 200A/s, 500A/s, 800a/s VR = 390V, TC = 125oC
Figure 2. Reverse Current vs Reverse Voltage
225 VR = 390V, TC = 125oC 200 tb at IF = 100A, 50A, 25A t, RECOVERY... |
| Description |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
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| File Size |
88.79K /
6 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FF1N30HS60DD
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| OCR Text |
... ta AT dIF/dt = 200A/s, 500A/s, 800a/s VR = 390V, TJ = 125oC tb AT dIF/dt = 200A/s, 500A/s, 800a/s
Figure 2. Reverse Current vs Reverse Voltage
120 VR = 390V, TJ = 125oC 100 t, RECOVERY TIMES (ns) tb AT IF = 60A, 30A, 15A 80
60
40... |
| Description |
30A, 600V Stealth Diode 30 A, 600 V, SILICON, RECTIFIER DIODE
33A, 600V Stealth Diode
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| File Size |
137.36K /
6 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800NSM33-A000
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| OCR Text |
...K) (typ) (max) (max) 3300V 3.2V 800a 1600A
External connection C1 Aux C C2
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
APPLICATIONS
s s s s
High Reli... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
173.83K /
10 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800DCM17-A000
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| OCR Text |
...) IC (max) IC(PK)
1700V 2.7V 800a 1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
Inverters Motor Controllers Traction Drives
5(E1)
1(E1)
2(C2)
6(G1)
The Powerline range ... |
| Description |
IGBT Chopper Module
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| File Size |
170.01K /
10 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DGT409BCA6565 DGT409BCA
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| OCR Text |
...0ms half sine. VD = 3000V, IT = 800a, IFG > 20A, tr > 1.5s VD = 3000V, RGK 1.5
dVD/dt
Rate of rise of off-state voltage VD = 3000V, VRG = -2V
LS
Peak stray inductance in snubber circuit
IT = 1500A, VDM = 6000V, dIGQ/dt = 20A... |
| Description |
Reverse Blocking Gate Turn-off Thyristor
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| File Size |
60.78K /
11 Page |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PRHMB400B12A
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| OCR Text |
...A,VGE=0V IF=400A,VGE=-10V,di/dt=800a/s
Min.
-
Max.
2.4 0.30
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
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| Description |
IGBT MODULE Chopper 400A 1200V
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| File Size |
120.54K /
3 Page |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4483 IDB09E60 IDP09E60 Q67040-S4482
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| OCR Text |
... time
V R=400V, IF=9A, di F/dt=800a/s, Tj=25C V R=400V, IF=9A, di F/dt=800a/s, Tj=125C V R=400V, IF=9A, di F/dt=800a/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 75 110 112 10.2 11.8 12.3 343 585 612 4 5.... |
| Description |
From old datasheet system
High Speed CMOS Logic Hex Inverting Buffers 16-SO -55 to 125
Fast Switching EmCon Diode 快速开关快恢复二极
Silicon Power Diodes - 9A EmCon in TO220-2
Silicon Power Diodes - 9A EmCon in TO263
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| File Size |
194.84K /
9 Page |
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