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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...10ms 2 Each terminal mounted on a recommended land Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Lim...25 VIN PW IB1 IC VCC -25V IB2 PW 50s DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90%...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

File Size 42.46K  /  4 Page

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...500 2.0 150 -55~+150 Unit V V V A A 1 mW W 2 C C 1 Pw=100ms *2 Mounted on a 40x40x0.7 (mm) ceramic substrate 1.5 1.6 4.5 3.0 ...25 - pF VCB= -10V, IE=0A, f=1MHz Ton - 25 - ns IC= -2.0A IB1= -200mA Tstg - 100 - ns IB2=200mA Tf - ...
Description MEDIUM POWER TRANSISTOR

File Size 42.56K  /  4 Page

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ....25 -55 -0.6 IB = -2 mA Common emitter Ta = 25C Single nonrepetitive pulse -0.4 -0.8 -1.2 -1...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ... 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1 : Base 2 : Collector 3 : Emitter TO-220D-A1 Package Internal Conne...25 (1) 20 15 10 5 (2) 0 0 20 40 60 80 100 120 140 160 0 0 - 0.4 - 0.8 -1.2 IC VBE -10 VCE(sa...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...in: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ...25 Collector current -3 DC current gain -20 -10 IB = -5 mA 100 -55 -2 -1 ...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...ain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ...25 -55 Collector current -3 20 15 IB = 10 mA DC current gain -2 100 -1 0 0 ...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... 110 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Curre...25)0.4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V ...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ... 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connecti...25 20 15 10 5 (2) 0 0 20 40 60 80 100 120 140 160 -5 -4 -3 -2 -1 0 -1 - 0.1 - 0.01 0 ...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...n: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns (typ...25 Collector current DC current gain IC -55 10 Common emitter VCE = -2 V Single nonre...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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