|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
Part No. |
QM30E3Y-2H QM30E2Y-2H QM30E2Y
|
Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE insULATED TYPE MEDIUM POWER SWITCHING USE insULATED TYPE 中功率开关使用绝缘型
|
File Size |
89.16K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
QM75E3Y-H QM75E2Y-H
|
Description |
HIGH POWER SWITCHING USE insULATED TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE insULATED TYPE
|
File Size |
88.87K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA[Toshiba Semiconductor]
|
Part No. |
GT40G121
|
Description |
insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
File Size |
139.45K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|