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    EM669325BG-1H/LG

Etron Technology, Inc.
Part No. EM669325BG-1H/LG
OCR Text ... - cas# latency: 1, 2 & 3 - burst length: 1, 2, 4, 8, or full page - burst type: sequential & interleave - burst-read-single-write ? burst stop function ? individual byte controlled by dqm0-3 ? auto refresh and self refre...
Description 4M x 32 Low Power SDRAM (LPSDRAM)

File Size 605.26K  /  51 Page

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    IDT79R3051 IDT79R3051-20 IDT79R3051-20J IDT79R3051-20MJ IDT79R3051-25 IDT79R3051-25J IDT79R3051-25MJ IDT79R3051-33 IDT79

IDT[Integrated Device Technology]
Part No. IDT79R3051 IDT79R3051-20 IDT79R3051-20J IDT79R3051-20MJ IDT79R3051-25 IDT79R3051-25J IDT79R3051-25MJ IDT79R3051-33 IDT79R3051-33J IDT79R3051-33MJ IDT79R3051-40 IDT79R3051-40J IDT79R3051-40MJ IDT79R3051E IDT79R3051E-20 IDT79R3051E-20J IDT79R3051E-20MJ IDT79R3051E-25 IDT79R3051E-25J IDT79R3051E-25MJ IDT79R3051E-33 IDT79R3051E-33J IDT79R3051E-33MJ IDT79R3051E-40 IDT79R3051E-40J IDT79R3051E-40MJ IDT79R3052 IDT79R3052-20 IDT79R3052-20J IDT79R3052-20MJ IDT79R3052-25 IDT79R3052-25J IDT79R3052-25MJ IDT79R3052-33 IDT79R3052-33J IDT79R3052-33MJ IDT79R3052-40 IDT79R3052-40J IDT79R3052-40MJ IDT79R3052E IDT79R3052E-20 IDT79R3052E-20J IDT79R3052E-20MJ IDT79R3052E-25 IDT79R3052E-25J IDT79R3052E-25MJ IDT79R3052E-33 IDT79R3052E-33J IDT79R3052E-33MJ IDT79R3052E-40 IDT79R3052E-40J IDT79R3052E-40MJ IDT79R305125MJ IDT79R3052E25MJ IDT79R305133MJ
OCR Text ... -- 4-deep read buffer supports burst refill from slow memory devices * * * * * * -- On-chip DMA arbiter -- Bus Interface minimizes desig...page Description Languages Clk2xIn Clock Generator Unit Master Pipeline Control System Cont...
Description RISControllers

File Size 179.35K  /  23 Page

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    Siemens
Part No. HYB39S64400AT-8 HYB39S64400AT-8B HYB39S64160ATL-10 HYB39S64160ATL-8 HYB39S64160ATL-8B HYB39S64400ATL-8 HYB39S64400ATL-8B HYB39S64800ATL-10 HYB39S64800ATL-8 HYB39S64800ATL-8B
OCR Text ...a rate is possible depending on burst length, cas latency and speed grade of the device. auto refresh (cbr) and self refresh operation are ...page (optional) for sequential wrap around -8 -8b -10 units fck max. 125 100 100 mhz tck3 8 10 10 ...
Description 64 MBit Synchronous DRAM
64Mbit Synchronous DRAM

File Size 679.38K  /  53 Page

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    Intel
Part No. 82374SB KU82374EB KU82374SB
OCR Text ...isa and isa bus e supports eisa burst and standard cycles e supports isa zero wait-state cycles e supports byte assembly/ disassembly for 8-...page 1.0 architectural overview 11 1.1 pceb overview 14 1.2 esc overview 16 2.0 signal descriptio...
Description EISA SYSTEM COMPONENT (ESC)

File Size 1,823.66K  /  208 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5V66DLF-P
OCR Text ...ed by a single control command (burst length of 1,2,4,8 or full page), an d the burst count sequence(se- quential or interleave). a burst of read or write cycles in progress can be terminated by a burst terminate command or can be interr...
Description 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54

File Size 252.59K  /  13 Page

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    VG36646141BT-8

Vanguard International Semiconductor
Part No. VG36646141BT-8
OCR Text ...s iatency (2,3) ? programmable burst length (1,2,4,8,&full page) ? programmable wrap sequence (sequential/interleave) ? automatic precharge and controlled precharge ? auto refresh and self refresh modes ? quad internal banks controlled by ...
Description CMOS Synchronous Dynamic RAM

File Size 973.84K  /  70 Page

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    Samsung Electronic
Part No. K1B6416B6C
OCR Text burst uni-transistor random access memory the attached datasheets are provided by samsu ng electronics. samsung electronics co., ltd. rese...page 23 - added comment on standby current(i sb1 ) measure condition as "standby mode is supposed ...
Description 4Mx16 bit Synchronous burst Uni-Transistor Random Access Memory

File Size 769.92K  /  46 Page

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    Samsung Electronic
Part No. K4H280438C/K4H280838C
OCR Text ...7(50% of data changing at every burst) idd7(100% of data changing at every burst) - 3 - rev. 0.7 nov.3. 2001 128mb c-die(x4/8) ddr sdr...page 29. - added tis and tpdex parameters in "power down" timing of page 31. - revised "absolute ...
Description 128Mb DDR SDRAM Data Sheet

File Size 328.35K  /  54 Page

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    Samsung Electronic
Part No. K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4C89083AF-AIF5 K4C89083AF-AIF6 K4C89083AF-AIFB K4C89083AF-GCF5 K4C89083AF-GCF6 K4C89083AF-GCFB K4C89083AF-GIF5 K4C89083AF-GIF6 K4C89083AF-GIFB K4C89093AF-ACF5 K4C89093AF-ACF6 K4C89093AF-ACFB K4C89093AF-AIF5 K4C89093AF-AIF6 K4C89093AF-AIFB K4C89093AF-GCF5 K4C89093AF-GCF6 K4C89093AF-GCFB K4C89093AF-GIF5 K4C89093AF-GIF6 K4C89093AF-GIFB K4C89163AF-ACF5 K4C89163AF-ACF6 K4C89163AF-ACFB K4C89163AF-AIF5 K4C89163AF-AIF6 K4C89163AF-AIFB K4C89183AF-AIF6 K4C89183AF-AIFB K4C89183AF-ACF5 K4C89183AF-ACF6 K4C89183AF-ACFB K4C89163AF-GIF6 K4C89163AF-GIFB K4C89183AF-GIF5 K4C89183AF-GIFB K4C89163AF-GIF5 K4C89183AF-GIF6 K4C89163AF-GCF5 K4C89163AF-GCF6 K4C89163AF-GCFB K4C89183AF-GCF5 K4C89183AF-GCF6 K4C89183AF-GCFB
OCR Text ... programable cas latency and burst length - cas laatency = 4, 5, 6 - burst length = 4 ? organization : 4,194,304 words x 4 banks x 18 bits ? power supply voltage v dd : 2.5v 0.125v ? ...
Description 288Mb x18 Network-DRAM2 Specification

File Size 1,471.20K  /  55 Page

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    K524G2GACB-A050

Samsung semiconductor
Part No. K524G2GACB-A050
OCR Text ... - cas latency ( 3 ) - burst length ( 2, 4, 8, 16 ) - burst type (sequential & interleave) ? emrs cycle with address key progr...page and an erase operation can be performed in typical 2ms on a (64k+2k)word block. data in the da...
Description 4Gb NAND Flash 2Gb Mobile DDR

File Size 1,452.32K  /  94 Page

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