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  c-341-08 Datasheet PDF File

For c-341-08 Found Datasheets File :: 513    Search Time::4.031ms    
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    ELANTEC[Elantec Semiconductor]
Part No. EL7232C EL7232CN EL7232CS
OCR Text ...Range Pkg Outline EL7232CN b 40 C to a 85 C 8-Pin P-DIP MDP0031 EL7232CS b 40 C to a 85 C 8-Pin SO MDP0027 Truth Table 3-State 1 1 0 0 I...341 047 Note All information contained in this data sheet has been carefully checked and is belie...
Description Dual Channel, High Speed, High Current Line Driver w/3-State
Dual Channel High Speed High Current Line Driver w/3-State

File Size 186.27K  /  8 Page

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    LD2981CXX50 LD2981CXX48 LD2981CXX47 LD2981CXX40 LD2981CXX38 LD2981CXX36 LD2981CXX33 LD2981CXX32 LD2981CXX30 LD2981CXX28

STMicroelectronics
Part No. LD2981CXX50 LD2981CXX48 LD2981CXX47 LD2981CXX40 LD2981CXX38 LD2981CXX36 LD2981CXX33 LD2981CXX32 LD2981CXX30 LD2981CXX28 LD2981CXX25 LD2981CXX18 LD2981CXX15 LD2981ABXX50 LD2981ABXX48 LD2981ABXX47 LD2981ABXX40 LD2981ABXX38 LD2981ABXX36 LD2981ABXX33 LD2981ABXX32 LD2981ABXX30 LD2981ABXX28 LD2981ABXX25 LD2981ABXX18 LD2981ABXX15
OCR Text ...y limited -55 to 150 -40 to 125 C C Unit V V Absolute Maximum Ratings are those values beyond which damage to the device may occur. Funct...341 3.366 3.415 3.645 3.672 3.726 3.847 3.876 3.933 4.05 4.08 4.14 4.758 4.794 4.864 4.91 4.947 5.01...
Description VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT LOW ESR OUTPUT CAPACITORS COMPATIBLE

File Size 420.66K  /  17 Page

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    2SC5629

HITACHI[Hitachi Semiconductor]
Part No. 2SC5629
OCR Text ...50 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff curr...341 0.358 ANG -21.4 -41.9 -59.8 -75.6 -88.8 -100.8 -110.8 -120.6 -130.0 -136.4 -144.1 -151.6 -157.0 ...
Description Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

File Size 64.10K  /  10 Page

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    IRHE57133SE

International Rectifier
Part No. IRHE57133SE
OCR Text ...CHANNEL 4# TECHNOLOGY c LCC-18 International Rectifier's R5TM technology provides high performance power MOSFETs for space app...341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32...
Description TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC
RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a 18-pin LCC package

File Size 116.64K  /  8 Page

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    IRHF57130 IRHF54130 IRHF53130 IRHF58130

IRF[International Rectifier]
Part No. IRHF57130 IRHF54130 IRHF53130 IRHF58130
OCR Text ... Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical) g www.irf.com ...341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 112.53K  /  8 Page

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    IRHF57133SE

International Rectifier
Part No. IRHF57133SE
OCR Text ...CHANNEL 4# TECHNOLOGY c TO-39 International Rectifier's R5 technology provides high performance power MOSFETs for space applic...341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32...
Description RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package

File Size 125.95K  /  8 Page

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    iMP
Part No. IMP2015 IMP2014 IMP2014_15
OCR Text ...ature x Low Drift Output: 40ppm/C x Guaranteed Minimum Output Current - IMP2014: 60mA - IMP2015: 110mA - IMP2185: 160mA x Over-current and O...341 631 921 0.2 40 0.04 23 56 136 215 61 108 252 545 1000 1500 2 VR + 2.5% mA Fixed Output Vol...
Description Power Management
From old datasheet system

File Size 140.59K  /  6 Page

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    IRHF57230SE

International Rectifier
Part No. IRHF57230SE
OCR Text ...CHANNEL 4# TECHNOLOGY c International Rectifier's R5TM technology provides high performance power MOSFETs for space application...341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 200 200 200 32...
Description RADIATION HARDENED POWER MOSFET

File Size 125.84K  /  8 Page

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    BGD885 BGD885_7 BGD88501

NXP Semiconductors
Philips
Part No. BGD885 BGD885_7 BGD88501
OCR Text ...IN. MAX. 26 65 +100 +100 V dBmV C C UNIT 2001 Nov 02 2 Philips Semiconductors Product specification 860 MHz, 17 dB gain power...341.25 MHz; Vp = Vo; fq = 348.25 MHz; Vq = Vo -6 dB; fr = 350.25 MHz; Vr = Vo -6 dB; measured at fp ...
Description 860 MHz, 17 dB gain power doubler amplifier
From old datasheet system

File Size 47.28K  /  8 Page

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    Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. FH103 1283
OCR Text ... : MCP6 Unit V V V mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC ...341 0.332 0.320 0.316 0.315 0.314 0.311 0.313 S11 -81.6 -119.5 -140.9 -154.0 -163.0 -170.9 -178.0 1...
Description High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

File Size 47.75K  /  4 Page

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For c-341-08 Found Datasheets File :: 513    Search Time::4.031ms    
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