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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT25Q102
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
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| File Size |
150.88K /
6 Page |
 View
it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT25J102
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| Description |
N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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| File Size |
88.71K /
1 Page |
View
it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT25G101
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
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| File Size |
193.24K /
4 Page |
View
it Online |
Download Datasheet |
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ERICSSON[Ericsson]
Ericsson Microelectronics
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| Part No. |
PGT20403
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| Description |
DFB/EA Laser Module for 10 Gb/s Applications 激光器/ EA的激光模块的10 Gb / s应用
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| File Size |
314.98K /
4 Page |
View
it Online |
Download Datasheet |
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| Part: CAT3636HV3-GT2 |
| Maker: ON Semiconductor |
| Pack: ETC |
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