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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM736V799
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OCR Text |
... 20ns) to -2.0v(pulse width t cyc /2) add overshoot spec 4.6v(pulse width t cyc /2) change v ih max from 5.5v to v dd +0.5v change t cd from 3.2ns to 3.1ns at bin -50. change t oe from 3.2ns to 3.1ns at bin -50. change setup from 1.5n... |
Description |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36浣??姝ユ?姘寸嚎??????RAM)
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File Size |
404.13K /
17 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM736V787
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OCR Text |
... 20ns) to -2.0v(pulse width t cyc /2) add overshoot spec 4.6v((pulse width t cyc /2) change v ih max from 5.5v to v dd +0.5v change i sb2 value from 20ma to 30ma. change v dd condition from v dd =3.3v+10%/-5% to v dd =3.3v+0.3v/-0.16... |
Description |
128Kx36-Bit Synchronous Burst SRAM(128Kx36位同步静RAM)
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File Size |
344.71K /
15 Page |
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it Online |
Download Datasheet
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Part No. |
KM736V799H-44
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OCR Text |
... 20ns) to -2.0v(pulse width t cyc /2) add overshoot spec 4.6v(pulse width t cyc /2) change v ih max from 5.5v to v dd +0.5v change t cd from 3.2ns to 3.1ns at bin -50. change t oe from 3.2ns to 3.1ns at bin -50. change setup from 1.5n... |
Description |
128K X 36 CACHE SRAM, 2.8 ns, PBGA119
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File Size |
469.20K /
17 Page |
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it Online |
Download Datasheet
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Price and Availability
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