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degradation Datasheet PDF File

For degradation Found Datasheets File :: 18907 Search Time::1.797ms
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				New Japan Radio
Part No.	NSVS783
OCR Text	...an +85C, it might be a cause of degradation or destruction of the component. Even if it endures during a short time, it causes degradation of qualification. 2. When soldering iron is used, solder with the temperature at the tip of soldering...
Description	JRC SAW FILTER
File Size	69.36K / 4 Page	View it Online	Download Datasheet

				Sharp Electrionic Components
Part No.	PC3H2B PC3H2BD PC3H2AC PC3H2AD PC3H2 PC3H2A PC3H2AB PC3H2BC PC3H2C PC3H2CD PC3H2D
OCR Text	...rporates non-coherent IRED. degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5years) into ...
Description	Mini-flat Half Pitch Package, High CMR Photocoupler
File Size	176.12K / 13 Page	View it Online	Download Datasheet

				Sharp Electrionic Components
Part No.	GP1S97J0000F
OCR Text	...rporates non-coherent IRED. degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) i...
Description	Gap : 2.2mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
File Size	135.98K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09MS015N AFT09MS015NT1
OCR Text	...5 (3 db overdrive) 17 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 760--870 mhz uhf broadband reference circuit. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	852.39K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09MS007N AFT09MS007NT1
OCR Text	...(3 db overdrive) 10.8 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 350?470 mhz uhf broadband reference circuit. 3. measured in 450?520 mhz uhf broadband reference circuit. 4. measured in 760?860 mhz u...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	1,413.46K / 28 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT05MS006N AFT05MS006NT1
OCR Text	...(3 db overdrive) 10.8 no device degradation 1. measured in 520 mhz narrowband test circuit. 2. measured in 440?520 mhz uhf broadband reference circuit. 3. measured in 760?870 mhz uhf broadband reference circuit. features ? characterized for...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	988.23K / 23 Page	View it Online	Download Datasheet

For degradation Found Datasheets File :: 18907 Search Time::1.797ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |